A method of manufacturing a semiconductor device includes forming a channel layer on a substrate, forming a mask on the channel layer, surface-treating an exposed surface of the channel layer exposed from the mask, forming an electrode on the exposed surface of the channel layer, and removing the mask. The channel layer includes a two-dimensional material, and the surface-treating of the exposed surface of the channel layer includes surface-treating the exposed surface of the channel layer with HCl.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a first insulating layer, a third step of forming a first conductive film over the first insulating layer, a fourth step of etching part of the first conductive film to form a first conductive layer, thereby forming a first region over the semiconductor layer that overlaps with the first conductive layer and a second region over the semiconductor layer that does not overlap with the first conductive layer, and a fifth step of performing first treatment on the conductive layer. The first treatment is plasma treatment in an atmosphere including a mixed gas of a first gas containing an oxygen element but not containing a hydrogen element, and a second gas containing a hydrogen element but not containing an oxygen element.

The present disclosure provides a display substrate, a method for preparing the same, and a display device. The method for preparing the display substrate includes a step of preparing a pixel driving circuit on a substrate, the step specifically includes: preparing a first active layer of an oxide transistor on the substrate; preparing a barrier layer on a surface of the first active layer away from the substrate, an orthogonal projection of the barrier layer on the substrate covering an orthogonal projection of the first active layer on the substrate; preparing a low-temperature polysilicon transistor is on the substrate; and preparing a first gate insulating layer, a first gate electrode, a first input electrode, and a first output electrode of the oxide transistor on the substrate.

Provided is a method for manufacturing a semiconductor device, the semiconductor device including a substrate, and an oxide semiconductor TFT that is supported by the substrate and includes an oxide semiconductor film as an active layer. The method includes: (A) preparing MO gas containing a first organometallic compound that contains In and a second organometallic compound that contains Zn; and (B) supplying gas containing the MO gas and oxygen to the substrate placed in a chamber under a condition in which the substrate is heated to 500 C. or lower, and growing an oxide semiconductor film containing In and Zn on the substrate using an MOCVD method. Step (B) is performed under a condition in which plasma is formed in the chamber.

A transistor includes a gate electrode with multiple metals distributed along the width of the gate electrode. Each of the metals in the gate electrode has different work functions. Such a compound gate provides higher linearity when, e.g., operated as a radio frequency transistor.

A transistor includes a gate electrode with multiple metals distributed along the width of the gate electrode. Each of the metals in the gate electrode has different work functions. Such a compound gate provides higher linearity when, e.g., operated as a radio frequency transistor.

An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

A semiconductor device includes a fin structure extending along a first direction, a channel layer wrapping around a top surface and opposite sidewalls of the fin structure, a gate stack extending across the channel layer along a second direction perpendicular to the first direction, and a spacer on a top surface of the channel layer and a sidewall of the gate stack when viewed in a cross section taken along the first direction. The channel layer includes a two-dimensional material. The gate stack includes a ferroelectric layer.

A semiconductor device includes a fin structure extending along a first direction, a channel layer wrapping around a top surface and opposite sidewalls of the fin structure, a gate stack extending across the channel layer along a second direction perpendicular to the first direction, and a spacer on a top surface of the channel layer and a sidewall of the gate stack when viewed in a cross section taken along the first direction. The channel layer includes a two-dimensional material. The gate stack includes a ferroelectric layer.