Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.

A ceramic substrate includes a substrate main body, and a conductor layer provided inside of the substrate main body. The substrate main body includes an insulator layer that is ceramics composed of aluminum oxide, and a composite oxide layer of aluminum and silicon, the composite oxide layer being formed between the insulator layer and the conductor layer.

Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

A device may include a first package and a second package where the first package has a warped shape. First connectors attached to a redistribution structure of the first package include a spacer embedded therein. Second connectors attached to the redistribution structure are fee from the spacer, the spacer of the first connectors keeping a minimum distance between the first package and the second package during attaching the first package to the second package.

Structured glass articles include a glass substrate including a glass cladding layer fused to a glass core layer, a cavity formed in the glass substrate, and a shielding layer disposed within the cavity. In some embodiments, a passivation layer is disposed within the cavity such that the shielding layer is between the passivation layer and the glass substrate. A method for forming a glass fan-out includes depositing a shielding layer within a cavity in a glass substrate. The glass substrate includes a glass cladding layer fused to a glass core layer. A silicon chip may be deposited within the cavity. In some embodiments, the method also includes depositing a passivation layer within the cavity such that the shielding layer is between the passivation layer and the glass substrate.

A method of manufacturing a ceramics-metal bonded body according to the present invention is a method of manufacturing a ceramics-metal bonded body in which a metal layer is bonded to at least one surface of a ceramics substrate, and comprises: a groove-forming step of forming a groove extending across a bonding region of a ceramics substrate to which a metal layer is bonded; and a bonding step of, after the groove-forming step, forming a metal layer by stacking, in the bonding region of the ceramics substrate, a metal plate of an aluminum or aluminum alloy with a thickness of less than or equal to 0.4 mm, via an Al—Si based brazing material foil, and bonding the metal plate to the bonding region by heating while applying load in a stacking direction.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

A method includes obtaining an active feature layer having a first surface bearing one or more active feature areas. A first capacitor plate of a first capacitor is formed on an interior surface of a cap. A second capacitor plate of the first capacitor is formed on an exterior surface of the cap. The first capacitor plate of the first capacitor overlays and is spaced apart from the second capacitor plate of the first capacitor along a direction that is orthogonal to the exterior surface of the cap to form the first capacitor. The cap is coupled with the first surface of the active feature layer such that the second capacitor plate of the first capacitor is in electrical communication with at least a first active feature of the active feature layer. The cap is bonded with the passive layer substrate.

A power module substrate according to the present invention is a power module substrate in which a copper sheet made of copper or a copper alloy is laminated and bonded onto a surface of a ceramic substrate (11), an oxide layer (31) is formed on the surface of the ceramic substrate (11) between the copper sheet and the ceramic substrate (11), and the thickness of a AgCu eutectic structure layer (32) is set to 15 m or less.

A semiconductor power device includes a substrate, a power chip, and a capping layer, and the substrate has a patterned unit, and the thickness of the substrate is matched with the configuration of the power chip, and the height of the power chip is smaller than the thickness of the substrate, and the power chip is installed at a position corresponding to the patterned unit, and the capping layer is covered onto a side of the patterned unit having the substrate, and the power chip is covered by the capping layer and installed to the substrate. This invention features a simple structure and reasonable design. Since the height of the patterned unit is matched with the thickness of the power chip, therefore the height of the installed power chip is lower than the substrate to facilitate the installation of the capping layer and the dissipation of heat.