Electrical connections for chip scale packaging are disclosed. In one embodiment, a semiconductor device includes a post-passivation layer disposed over a substrate, the substrate having a first direction of coefficient of thermal expansion mismatch. The semiconductor device includes a first opening through the post-passivation layer, the first opening comprising a plurality of elongated apertures. A longest of the plurality of elongated apertures comprises a first dimension, wherein the first dimension is aligned substantially perpendicular to the first direction of coefficient of thermal expansion mismatch.

A wiring substrate includes a wiring layer on a projection of an insulating layer. The wiring layer includes a first metal layer on an end face of the projection with a peripheral portion of the end face exposed, a second metal layer that is on the first metal layer and wider than the end face, and a third metal layer. The second metal layer includes first and second opposite surfaces with the second surface on the first metal layer with a peripheral portion thereof exposed. The third metal layer covers side surfaces of the first metal layer, and the first surface, the peripheral portion of the second surface, and side surfaces of the second metal layer, and fills in a region where the end face and the peripheral portion of the second surface face each other. The materials of the second and third metal layers are different.

A semiconductor device includes a semiconductor module, an insulating resin layer, a frame member, and a heat sink. Insulating resin layer is bonded to semiconductor module and contains a first resin. Frame member is disposed to surround insulating resin layer, and includes a porous material. Heat sink and semiconductor module sandwich insulating resin layer and frame member. Frame member is compressed while being sandwiched between semiconductor module and heat sink. Insulating resin layer is filled in a region surrounded by semiconductor module, heat sink, and frame member. The first resin enters pores of the porous material.

A housing for a power semiconductor module arrangement includes sidewalls and a lid. The lid includes a first layer of a first material having a plurality of openings, and second layer of a second material that is different from the first material. The second layer completely covers a bottom surface of the first layer. The second layer includes a plurality of protrusions, each protrusion extending into a different one of the plurality of openings of the first layer such that each of the plurality of openings is completely covered by one of the protrusions.

A mounting device for mounting electronic components, wherein the mounting device comprises a stack, in particular a layer stack configured as alternating sequence of at least one support structure for providing mechanical support and a plurality of thermally conductive and electrically insulating structures.

A method for producing a ceramic multilayer element is disclosed. In an embodiment the method includes forming a plurality of multilayer segments in a green state, wherein each multilayer segment is formed by pressing together a plurality of ceramic layers in the green state and pressing together the multilayer segments in the green state to form a multilayer element that is in the green state. The method further includes sintering the multilayer element that is in the green state to form a ceramic multilayer element that includes the ceramic layers and electrode layers arranged one on top of another, wherein at least one or more of a temperature at which the multilayer segments are pressed together, a pressing force applied during the pressing of the multilayer segments, and/or a duration of the pressing of the multilayer segments are adjusted.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure including a first substrate, and a first circuit layer positioned on the first substrate, a first redistribution structure positioned on the first circuit layer, and a second semiconductor structure including a second circuit layer positioned on the first redistribution structure, and a second substrate positioned on the second circuit layer. A layout of the first circuit layer and a layout of the second circuit layer are substantially the same and the first redistribution structure is electrically coupled to the first semiconductor structure and the second semiconductor structure.

An embodiment includes an apparatus comprising: a rod-shaped substrate including a rod long axis; a first layer, including a first interconnect, substantially surrounding the substrate in a first plane that is orthogonal to the rod long axis; and a second layer, including a second interconnect, substantially surrounding the first layer in the first plane. Other embodiments are described herein.

A semiconductor package structure, including a circuit substrate, at least two chips, an encapsulant, and a redistribution layer, is provided. The circuit substrate has a first surface and a second surface opposite to the first surface. The at least two chips are disposed on the first surface. Each of the at least two chips has an active surface facing the circuit substrate and includes multiple first conductive connectors and multiple second conductive connectors disposed on the active surface. A pitch of the first conductive connectors is less than a pitch of the second conductive connectors. The encapsulant encapsulates the at least two chips. The redistribution layer is located on the second surface. The first conductive connectors are electrically connected to the redistribution layer by the circuit substrate. The second conductive connectors are electrically connected to the circuit substrate. A manufacturing method of a semiconductor package structure is also provided.

A method of manufacturing a glass article comprises: (A) forming a first layer of catalyst metal on a glass substrate; (B) heating the glass substrate; (C) forming a second layer of an alloy of a first metal and a second metal on the first layer; (D) heating the glass substrate, thereby forming a glass article comprising: (i) the glass substrate; (ii) an oxide of the first metal covalently bonded thereto; and (iii) a metallic region bonded to the oxide, the metallic region comprising the catalyst, first, and second metals. In embodiments, the method further comprises (E) forming a third layer of a primary metal on the metallic region; and (F) heating the glass article thereby forming the glass article comprising: (i) the oxide of the first metal covalently bonded the glass substrate; and (ii) a new metallic region bonded to the oxide comprising the catalyst, first, second, and primary metals.