The present disclosure relates to a package architecture and a method for making the same. The disclosed package architecture includes a package carrier, a first device die and a second device die mounted on the package carrier, and a heat spreader. The first device die includes a first device body with a thickness between 5 μm and 130 μm, a die carrier, and an attachment section between the first device body and the die carrier, while the second device die includes a second device body. The first device body and the second device body are formed of different materials. A top surface of the die carrier of the first device die and a top surface of the second device body of the second device die are substantially coplanar. The heat spreader resides over the top surface of the die carrier and the top surface of the second device body.

A power semiconductor component is specified, having a power semiconductor device arranged within a housing, wherein a heat sink is exposed on a first surface of the housing; a wiring substrate which receives the housing with the power semiconductor device and which has a first main surface and a second main surface. A heat dissipation region with increased thermal conductivity is arranged on the second main surface. The housing is arranged on the wiring substrate in such a way that the heat sink is connected to the heat dissipation region via a solder layer. A number of spacers which are arranged between the heat sink and the heat dissipation region are embedded in the solder layer. Furthermore, a method for producing a power semiconductor component is specified.

Provided is a method that allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic; arranging the first member to be joined and the second member to be joined so that they are in contact with each other via the oxygen ion conductor layer; connecting the first member to be joined to one of a positive electrode side and a negative electrode side of a voltage application device and the second member to be joined to the other; and applying a voltage between the first member to be joined and the second member to be joined to join the first member to be joined and the second member to be joined together.

Various embodiments of the present disclosure are directed towards a semiconductor structure including a device layer having a front-side surface opposite a back-side surface. A first heat dispersion layer is disposed along the back-side surface of the device layer. A second heat dispersion layer underlies the front-side surface of the device layer. The second heat dispersion layer has a thermal conductivity lower than a thermal conductivity of the first heat dispersion layer.

Disclosed are a method of manufacturing an aluminum-based clad heat sink, and an aluminum-based clad heat sink manufactured by the method. The method includes ball-milling (i) aluminum or aluminum alloy powder and (ii) carbon nanotubes (CNT) to prepare a composite powder, preparing a multi-layered billet using the composite billet, and directly extruding the multi-layered billet using an extrusion die to produce a heat sink. The method has an advantage of producing a light high-strength high-conductivity aluminum-based clad heat sink having an competitive advantage in terms of price by using direct extrusion that is suitable for mass production due to its simplicity in process procedure and equipment required.

The present invention relates to a method of manufacturing a cooling device using a heat pipe in which, using casting, the heat pipe is embedded inside a housing, and the method includes a filling step in which a predetermined support member is filled inside a pipe to prevent deformation of the pipe by a pressure of a melt being injected into a cavity of a mold that is closeable, a pipe seating step in which the pipe filled with the predetermined support member is seated in the cavity, a melt injecting step in which the melt is injected into the cavity to surround the pipe, a cooling and withdrawing step in which the injected melt is cooled and a molded product is withdrawn, an injecting step in which a working fluid is injected into the pipe through an injection end, and a finishing step in which, after the injecting step, the pipe is sealed.

Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.

A microcooler device and formation thereof. The microcooler device includes: a first set of fins having a first fin width; a second set of fins having a second fin width, wherein the first set of fins alternate between the second set of fins; and a set of channels located between the first set of fins and the second set of fins.

A semiconductor package includes a wafer and at least one chip attached on first portions of an upper surface of the wafer. Further, the semiconductor package includes an insulating barrier layer, a thermally conductive layer, and a heat sink. The insulating barrier layer is arranged over the at least one chip attached on first portions of an upper surface of the wafer. The thermally conductive layer is arranged over the insulating barrier layer and at least partially encapsulates the at least one chip. The heat sink is arranged over the thermally conductive layer.

When a laminate of a plurality of different materials including a metal plate is bonded in a pressurized and heated state, a first pressurizing member in which a first metal foil/a carbon sheet or a ceramic sheet/a graphite sheet are laminated in this order is arranged so that the first metal foil is in contact with a surface of the first metal plate of the laminate, the first metal foil is made of a material that does not react at a contact surface of the first plate member and the first metal foil when heating, and a product of a Young's modulus (GPa) and a thickness (mm) of the first metal foil is 0.6 or more and 100 or less, so that a good bonded body can be manufactured by evenly pressurizing the laminate and foreign substances can be restrained from adhering to the surface of the laminate.