The semiconductor device manufacturing method includes a bonding step of bonding a wire to an electrode (35a), a looping wire formation step of looping the wire from the electrode (35a) to a dummy electrode (34) to form a looping wire (50a), a pressing step of pressing a part of the wire, a moving step of moving the pressed part of the wire directly above the electrode, a wire separation step of separating the wire partially from a wire supply to form a pin wire (55a) extending vertically upward from the electrode (35a), wherein the looping wire formation step adjusts the looping height of the wire to set the length of the looping wire to a predetermined length.

The semiconductor device manufacturing method includes a bonding step of bonding a wire to an electrode (35a), a looping wire formation step of looping the wire from the electrode (35a) to a dummy electrode (34) to form a looping wire (50a), a pressing step of pressing a part of the wire, a moving step of moving the pressed part of the wire directly above the electrode, a wire separation step of separating the wire partially from a wire supply to form a pin wire (55a) extending vertically upward from the electrode (35a), wherein the looping wire formation step adjusts the looping height of the wire to set the length of the looping wire to a predetermined length.

A method for manufacturing a semiconductor device, a first structure is formed on a first substrate. A first bonded body is formed by bonding a supporting substrate lower in rigidity than the first substrate to a first principal surface, on which the first structure is formed, of the first substrate. The first substrate is removed from the first bonded body. A second structure is formed on a second substrate. A third structure is formed on a third substrate. A second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate. The second substrate is removed from the second bonded body. A third bonded body is formed by bonding a fourth principal surface, which is exposed after the first substrate is removed, of the first bonded body to a fifth principal surface, which is exposed after the second substrate is removed, of the second bonded body. The supporting substrate is removed from the third bonded body.

A method for manufacturing a semiconductor device, a first structure is formed on a first substrate. A first bonded body is formed by bonding a supporting substrate lower in rigidity than the first substrate to a first principal surface, on which the first structure is formed, of the first substrate. The first substrate is removed from the first bonded body. A second structure is formed on a second substrate. A third structure is formed on a third substrate. A second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate. The second substrate is removed from the second bonded body. A third bonded body is formed by bonding a fourth principal surface, which is exposed after the first substrate is removed, of the first bonded body to a fifth principal surface, which is exposed after the second substrate is removed, of the second bonded body. The supporting substrate is removed from the third bonded body.

Methods for preparing metal structures on substrates by providing at least two substrates on which different parts of the metal structure are formed, which are bonded together to form the metal structure by thermocompression bonding, thermosonic bonding or transient liquid phase bonding such that a hermetic seal is provided and an optional hermetically sealed cavity forms in the structure, and releasing at least one of the substrates from the thereto bonded metal structure by removing a seed layer or sacrificial layer by an etching or reverse plating technique.

Methods for preparing metal structures on substrates by providing at least two substrates on which different parts of the metal structure are formed, which are bonded together to form the metal structure by thermocompression bonding, thermosonic bonding or transient liquid phase bonding such that a hermetic seal is provided and an optional hermetically sealed cavity forms in the structure, and releasing at least one of the substrates from the thereto bonded metal structure by removing a seed layer or sacrificial layer by an etching or reverse plating technique.

A wire bonding system according to the present invention comprises: an acquisition unit that acquires information pertaining to the diameter of a pressure-bonded ball where a wire is pressure-bonded to an electronic component by wire bonding; a first storage unit that stores the information pertaining to the pressure-bonded ball diameter which has been acquired by the acquisition unit; and an inspection unit that inspects the quality of wire bonding on the basis of the information pertaining to the pressure-bonded ball diameter which has been read from the first storage unit. With the wire bonding system, it is possible to enhance convenience in a method for checking the quality of wire bonding.

A wire bonding system according to the present invention comprises: an acquisition unit that acquires information pertaining to the diameter of a pressure-bonded ball where a wire is pressure-bonded to an electronic component by wire bonding; a first storage unit that stores the information pertaining to the pressure-bonded ball diameter which has been acquired by the acquisition unit; and an inspection unit that inspects the quality of wire bonding on the basis of the information pertaining to the pressure-bonded ball diameter which has been read from the first storage unit. With the wire bonding system, it is possible to enhance convenience in a method for checking the quality of wire bonding.

A package structure and a formation method are provided. The method includes disposing a chip-containing structure over a substrate and forming a thermal conductive layer over the chip-containing structure. The method also includes disposing a heat-spreading lid over the chip-containing structure and the thermal conductive layer. A metallic structure is embedded in the heat-spreading lid, and the metallic structure faces the thermal conductive layer. The method further includes pressing the heat-spreading lid against the chip-containing structure at an elevated temperature such that a portion of or an entirety of the metallic structure and a portion of or an entirety of the thermal conductive layer are transformed into an intermetallic compound material.

A package structure and a formation method are provided. The method includes disposing a chip-containing structure over a substrate and forming a thermal conductive layer over the chip-containing structure. The method also includes disposing a heat-spreading lid over the chip-containing structure and the thermal conductive layer. A metallic structure is embedded in the heat-spreading lid, and the metallic structure faces the thermal conductive layer. The method further includes pressing the heat-spreading lid against the chip-containing structure at an elevated temperature such that a portion of or an entirety of the metallic structure and a portion of or an entirety of the thermal conductive layer are transformed into an intermetallic compound material.