A bonding tool that executes an ultrasonic vibration processing of applying ultrasonic vibration to an application portion on a lead wire from a direct contact tip portion and a pair of press mechanisms having a pair of press rollers capable of performing a rotational operation. The pair of press mechanisms executes a press processing of pressing both sides of the application portion on the lead wire by the pair of press rollers at a time of execution of the ultrasonic vibration processing by the bonding tool and a movement processing of executing a rotational operation performed by the pair of press rollers to move the pair of press rollers on the lead wire while pressing the lead wire at a time of non-execution of the ultrasonic vibration processing.

A semiconductor device includes: two conductive members; a semiconductor element bonded to one of the two conductive members; and a relay terminal bonded to the two conductive members. The relay terminal has a first strip portion and a second strip portion that are bonded to the two conductive members, and a connecting portion that connects the first strip portion and the second strip portion. The first strip portion has a first side. The connecting portion has a first intermediate side, and a first connecting side connecting the first side and the first intermediate side. As viewed in the thickness direction, the first connecting side is located away from a first virtual intersection that is an intersection of a first virtual line overlapping with the first side and a second virtual line overlapping with the first intermediate side.

A semiconductor manufacturing apparatus includes a tool performing joining by ultrasonic vibration while applying a load to a metal terminal. The tool includes a plurality of protrusions arranged along the X-axis direction and the Y-axis direction on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal. The intervals between the plurality of protrusions are equal in the X direction of the pressing surface, and are larger on the inner peripheral side than on the outer peripheral side in the Y-axis direction of the pressing surface.

A semiconductor manufacturing apparatus includes a tool performing joining by ultrasonic vibration while applying a load to a metal terminal. The tool includes a plurality of protrusions arranged along the X-axis direction and the Y-axis direction on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal. The intervals between the plurality of protrusions are equal in the X direction of the pressing surface, and are larger on the inner peripheral side than on the outer peripheral side in the Y-axis direction of the pressing surface.

A semiconductor manufacturing apparatus includes a tool performing joining by ultrasonic vibration while applying a load to a metal terminal. The tool includes a plurality of protrusions arranged along the X-axis direction and the Y-axis direction on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal. The intervals between the plurality of protrusions are equal in the X direction of the pressing surface, and are larger on the inner peripheral side than on the outer peripheral side in the Y-axis direction of the pressing surface.

A semiconductor manufacturing apparatus includes a tool performing joining by ultrasonic vibration while applying a load to a metal terminal. The tool includes a plurality of protrusions arranged along the X-axis direction and the Y-axis direction on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal. The intervals between the plurality of protrusions are equal in the X direction of the pressing surface, and are larger on the inner peripheral side than on the outer peripheral side in the Y-axis direction of the pressing surface.

An ultrasonic bonding device includes a stage and an ultrasonic horn. A first flat member and a second flat member to be bonded are placed on the stage. The ultrasonic horn includes a press part to be pressed on a laminated portion of the first flat member and the second flat member. The stage includes a lower-side surface, a higher-side surface, and a step wall surface. The first flat member is to be placed on the lower-side surface. The higher-side surface is positioned higher than the lower-side surface by a predetermined step height. The second flat member is to be placed on the higher-side surface. The step wall surface is positioned in a boundary between the lower-side surface and the higher-side surface.

A substrate processing apparatus includes: a placement part whereon a substrate container is placed; a substrate retainer supporting the substrate; transfer mechanisms configured to transfer the substrate between the substrate container and the substrate retainer and to perform a transfer operation; a detector provided at one or more of the transfer mechanisms to detect vibration; a memory device that registers, in advance, natural frequencies of the substrate and one or more of the transfer mechanisms and threshold values of the substrate and the plurality of transfer mechanisms; and a monitoring part to monitor whether an intensity of the vibration, based on transformed data obtained by transforming detection data, exceeds at least one of the threshold values of the substrate and the plurality of transfer mechanisms and whether a vibration frequency is equal to at least one of the natural frequencies of the substrate and the plurality of transfer mechanisms.

An ultrasonic composite vibration device includes a base end part, an enlarged part, and a tip end part arranged in a straight line from a base end side to a tip end side. The base end part has a transducer generating longitudinal vibration and torsional vibration. The enlarged part has a cross-sectional area larger than the base end part, and the tip end part has a cross-sectional area smaller than the enlarged part. A node of the torsional vibration is located at the enlarged part, and antinodes of the longitudinal vibration and the torsional vibration are located at a base end surface and a tip end surface of the ultrasonic composite vibration device. An axial position and an axial dimension of the enlarged part are set to a position and a dimension at which resonance frequencies of the longitudinal vibration and the torsional vibration are substantially equal.

Provided is a semiconductor device with higher reliability and longer life which can suppress an increase in production costs. A semiconductor device includes: a semiconductor element; a top electrode on an upper surface of the semiconductor element; and a conductive metal plate containing copper as a main component and solid-state diffusion bonded to the top electrode of the semiconductor element.