Patent classifications
H01L21/67023
SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD
Provided is a substrate processing system and a substrate processing method. The substrate processing system includes a polishing part for performing a Chemical Mechanical Polishing (CMP) process on a substrate, a cleaning part for cleaning the substrate on which the polishing process is performed, and a substrate transferring part for transferring the substrate to the cleaning part before polishing the substrate in the polishing part. The substrate may be preparatorily cleaned in the cleaning part before the polishing process, and then enters the polishing part.
SYSTEMS, APPARATUS, AND METHODS FOR AN IMPROVED SUBSTRATE HANDLING ASSEMBLY
Embodiments of the present invention provide systems, apparatus, and methods for an improved substrate handling assembly. Embodiments include a pair of actuated arms; a pair of substrate capture tips, each capture tip formed in a different distal end of each actuated arm; an actuator coupled to a proximate end of the actuated arms and operative to actuate the actuated arms; and a hard stop positioned to prevent the actuator from closing the actuated arms more than a predefined amount so that in a closed position, the actuated arms do not contact a substrate positioned to be picked up by the substrate handing assembly. Numerous additional aspects are disclosed.
PUMP AND APPARATUS FOR SUPPLYING LIQUID
A pump is disclosed which includes a pump body, a silencer connected to the pump body, and a condensation preventing device surrounding the silencer. A liquid supplying apparatus is also disclosed which includes the pump for providing a power to supply the liquid to outside, and a storage tank for storing a liquid.
SUBSTRATE PROCESSING APPARATUS
In a substrate processing apparatus, the inner peripheral edge of a second-cup canopy part radially opposes an outer peripheral surface of an opposing-member side wall part. This suppresses dispersion of processing liquids to above a cup part. A second-cup gap distance that is a radial distance between the outer peripheral surface of the opposing-member side wall part and the inner peripheral edge of the second-cup canopy part is greater than a holder gap distance that is a radial distance between the inner peripheral surface of the opposing-member side wall part and the outer peripheral surface of the substrate holder. This prevents or suppresses the possibility that, when a second processing liquid dispersed from a substrate is received by a second cup, the second processing liquid may be pushed downward by a downward airflow. Accordingly, a plurality of types of processing liquids will be separately received by a plurality of cups.
Liquid treatment method, substrate processing apparatus and non-transitory storage medium
In one embodiment, a liquid treatment method includes (A) imaging a discharging port part of the liquid nozzle each time the discharging process is performed to one substrate, and acquiring, from images thus obtained, size data on foreign matter possibly present at the discharging port part; and (B) based on a history of the size data arranged in chronological order, judging whether an abnormality in substrate-processing has occurred. In the item (B), if the number of continuous acquisition, indicating how many times the size data not smaller than a first threshold value has been acquired continuously, exceeds a predetermined value, then judging that an abnormality in substrate-processing has occurred.
POINT OF USE OR POINT OF DISPENSE FILTER WIHT MULTIPLE PLEAT PACKS
Embodiments provide a filter with a generally rectangular, non-cylindrical profile. The filter may have multiple pleat packs positioned between pleat covers that define regions and flow channels in a cavity of the filter body. The pleat covers have openings that allow a fluid to flow through the multiple pleat packs via parallel flows or series flows. End caps bonded to the body define flow passages for directing the fluid from an inlet to an outlet via the pleat packs for series or parallel filtration. The pleat packs may be made of the same or different materials and may be configured with the same or different heights based on flow requirements. A cage or a separator may be positioned between the pleat packs. The pleat packs may be made of a continuous pleated membrane with bridges defining a space between the pleat packs to accommodate the cage or separator.
ALUMINUM ELECTROPLATING AND OXIDE FORMATION AS BARRIER LAYER FOR ALUMINUM SEMICONDUCTOR PROCESS EQUIPMENT
The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.
SYSTEMS AND METHODOLOGIES FOR VAPOR PHASE HYDROXYL RADICAL PROCESSING OF SUBSTRATES
An apparatus and method for processing substrates. The method includes positioning a substrate within a processing chamber of a substrate processing system. The substrate includes a layer of a carbon-containing material on a working surface of the substrate. The method also includes receiving hydrogen peroxide vapor in a vapor treatment region of the substrate processing system, generating hydroxyl radical vapor by treating the hydrogen peroxide vapor in the vapor treatment region, and directing the hydroxyl radical vapor and remaining hydrogen peroxide vapor to the working surface of the substrate causing the carbon-containing material to be chemically modified.
SUBSTRATE PROCESSING APPARATUS
A transfer path is provided which is extended so as to be passed on a lateral side of a processing portion that processes a substrate. The substrate transferred between a container held by a holding unit and the processing portion passes through the transfer path. A first transfer robot carries the substrate into and out of the container held by the holding unit, and accesses a reception/delivery region arranged within the transfer path. A second transfer robot receives and delivers the substrate from and to the first transfer robot in the reception/delivery region, and carries the substrate into and out of the processing portion. A second transfer robot raising/lowering unit which raises and lowers the second transfer robot is arranged within the transfer path. The reception/delivery region and the second transfer robot raising/lowering unit are located between the first transfer robot and the second transfer robot.
HYPERBARIC CLEAN METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR CHAMBER COMPONENTS
Embodiments of a methods and cleaning systems for cleaning components for use in substrate processing equipment are provided herein. In some embodiments, a cleaning system includes a boiler having a heater configured to heat a fluid; a clean chamber fluidly coupled to the boiler via at least one of a gas line and a liquid line, wherein the clean chamber includes one or more fixtures in an interior volume therein for holding at least one component to be cleaned, and wherein the clean chamber includes a heater for heating the interior volume; and an expansion chamber fluidly coupled to the clean chamber via a release line for evacuating the clean chamber, wherein the release line includes a release valve to selectively open or close a flow path between the expansion chamber and the clean chamber, and wherein the expansion chamber includes a chiller and a vacuum port.