H01L21/67023

Substrate processing apparatus, substrate processing method and computer-readable recording medium
11207717 · 2021-12-28 · ·

There is provided a substrate processing apparatus which includes: an exhaust pipe configured to selectively discharge an exhaust gas generated by a substrate process to a first pipe or a second pipe; a liquid supply part configured to supply a cleaning liquid to the exhaust pipe; a discharge destination setting part configured to set a discharge destination of the exhaust gas to the first pipe or the second pipe by rotating the exhaust pipe; and a controller configured to control the discharge destination setting part to rotate the exhaust pipe. The controller is further configured to control the liquid supply part to supply the cleaning liquid to the rotating exhaust pipe.

PROTECTION OF SEED LAYERS DURING ELECTRODEPOSITION OF METALS IN SEMICONDUCTOR DEVICE MANUFACTURING
20220208604 · 2022-06-30 ·

A protective layer is formed over a copper seed layer on a semiconductor substrate prior to electroplating. The protective layer is capable of protecting the copper seed layer from oxidation and from dissolution in an electrolyte during initial phases of electroplating. The protective layer, in some embodiments, prevents the copper seed layer from contacting atmosphere, and from being oxidized by atmospheric oxygen and/or moisture. The protective layer contains a metal that is less noble than copper (e.g., cobalt), where the metal can be in an oxidized form that is readily soluble in a plating liquid. In one embodiment a protective cobalt layer is formed by depositing cobalt metal by chemical vapor deposition over copper seed layer without exposing the copper seed layer to atmosphere, followed by subsequent oxidation of cobalt to cobalt oxide that occurs after the substrate is exposed to atmosphere. The resulting protective layer is dissolved during electroplating.

SUBSTRATE TREATING APPARATUS AND METHOD FOR THE SAME
20220205100 · 2022-06-30 ·

A substrate treating apparatus is disclosed. The substrate treating apparatus includes a treating container having a treatment space to treat a substrate, a standby port positioned at one side of the treating container to allow a nozzle, which discharges a treatment liquid, to stand by, and a liquid supplying unit moving between the treating container and the standby port and having the nozzle. The standby port includes a nozzle receiving member including a nozzle receiving unit having a receiving space formed inside the nozzle receiving unit to receive the nozzle and a cleaning liquid and a discharge part having a discharge port provided at one side of the nozzle cleaning unit to discharge the cleaning liquid to the nozzle. The discharge port is provided to overlap at least a portion of the nozzle when viewed from above.

APPARATUS AND METHOD FOR TREATING SUBSTRATE
20220208564 · 2022-06-30 · ·

A substrate treating device includes a liquid treating chamber for liquid-treating a substrate therein, a drying chamber for dry-treating the liquid-treated substrate, a transfer device for transferring the substrate between the liquid treating chamber and the drying chamber, and a controller for controlling the liquid treating chamber and the transfer device. The transfer device includes a transfer robot having a hand for placing the substrate thereon, and a heating member for heating the substrate. The controller controls the transfer device such that the heating member of the transfer device heats a liquid on the substrate to a first temperature before the transfer device transfers the substrate taken out from the liquid treating chamber to the drying chamber.

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
20220208563 · 2022-06-30 ·

A substrate processing apparatus includes a spin chuck that holds a substrate, and a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck. The fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate. The gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage.

Method of restoring collapsed pattern, substrate processing method, and substrate processing device
11373860 · 2022-06-28 · ·

The collapsed pattern recovering method is a method for recovering a collapsed pattern which is a pattern formed on a front surface of a substrate, and the method includes a reactive gas supplying step which supplies to the front surface of the substrate a reactive gas that can react with a product existing on the front surface. The reactive gas supplying step includes a hydrogen fluoride vapor supplying step which supplies vapor that contains hydrogen fluoride to the front surface of the substrate. The collapsed pattern recovering method further includes a substrate heating step which heats the substrate in parallel with the hydrogen fluoride vapor supplying step.

Substrate processing apparatus, substrate processing system and substrate processing method
11373883 · 2022-06-28 · ·

A substrate processing apparatus includes a substrate processing unit, a partition wall, a first gas supply, and a second gas supply. The substrate processing unit performs a liquid processing on a substrate. The partition wall separates a first space defined from a carry-in/out port through which the substrate is loaded to the substrate processing unit, and a second space other than the first space. The first gas supply is connected to the partition wall, and supplies an atmosphere adjusting gas to the first space. The second gas supply is connected to a place different from the first gas supply in the partition wall, and supplies an atmosphere adjusting gas to the first space.

WAFER CUP
20220195089 · 2022-06-23 · ·

A wafer cup including a copolymer containing a tetrafluoroethylene unit and a fluoro(alkyl vinyl ether) unit. A water contact angle of at least a part of an inner surface of the wafer cup is 80 degrees or less.

LIGHT TREATING MEMBER, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME AND SUBSTRATE TREATING METHOD
20220199434 · 2022-06-23 · ·

The inventive concept provides a light treating member for performing a light treatment on a substrate. The light treating member comprises a circuit unit comprising a plurality of LED module units connected in series, each LED module unit comprising a plurality of identical LED modules connected with each other in parallel.

Filter coupling device and substrate treating apparatus provided therewith

Disclosed is a filter coupling device having joint members, a base plate, a filter holder, a rotation shaft, and a leg. The filter holder allows support of a first filter and a second filter. The rotation shaft is connected with the filter holder. The filter holder takes a first attitude and a second attitude by rotating around the rotation shaft. The filter holder includes a first filter holder configured to support the first filter in the first attitude, and a second filter holder configured to support the second filter in the second attitude.