A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.

A substrate processing apparatus a processing liquid supply unit includes a nozzle supplying a processing liquid onto the substrate, a supply line connected to the nozzle to supply the processing liquid to the nozzle, and a cooler cooling the processing liquid. A volume of the processing liquid is reduced by the cooler so that the processing liquid may be sucked.

A substrate treatment device includes an EFEM unit, a cleaning and drying unit, and at least one load port unit, and the cleaning and drying unit includes a wafer holding mechanism, a transfer arm, a cleaning liquid supply nozzle, and a gas supply nozzle. The EFEM unit includes a transfer robot and a transfer arm capable of transferring a wafer between a load port unit of the at least one load port unit and the cleaning and drying unit, and the cleaning and drying unit is coupled to the EFEM unit in series with the load port unit.

A wafer carrier assembly includes a wafer carrier and a fluid passage. The wafer carrier comprises a retainer ring confining a wafer accommodation space. The fluid passage is inside the wafer carrier. The fluid passage includes an inlet and at least an outlet to dispense fluid into the wafer accommodation space.

An apparatus and a method for dispensing a viscous adhesive for attaching a semiconductor die onto a substrate are provided, where the method comprises the steps of dispensing a volume of viscous adhesive from a nozzle onto the substrate and moving the nozzle away from the substrate such that an adhesive tail is formed between the nozzle and the volume of viscous adhesive. The method further comprises the steps of capturing multiple images of the adhesive tail with an imaging device as the nozzle is moving away from the substrate with an imaging device; and thereafter detecting with the imaging device an instant when the adhesive tail breaks from the volume of viscous adhesive.

The present invention provides a plasma processing method for subjecting a sample on which a metal element-containing film is disposed to plasma etching in a processing chamber. The method comprises: subjecting an inside of the processing chamber to plasma cleaning using a boron element-containing gas; removing the boron element using plasma after the plasma cleaning; subjecting the inside of the processing chamber to plasma cleaning using a fluorine element-containing gas after removing the boron element; depositing a deposited film in the processing chamber by plasma using a silicon element-containing gas after the plasma cleaning using the fluorine element-containing gas; and subjecting the sample to plasma etching after depositing the deposited film.

A substrate processing apparatus includes: a processing tank that stores a processing liquid for performing a liquid processing on a plurality of substrates; a substrate support that supports the plurality of substrates such that main surfaces of each of the plurality of substrates follow a vertical direction in the processing tank; a processing liquid ejection unit provided below the plurality of substrates supported by the substrate support, and generates an ascending flow of the processing liquid in the processing tank; and a rectifying section that adjusts flow of the processing liquid in a side space formed between a first side wall of the processing tank and a first substrate having a main surface facing the first side wall of the processing tank among the plurality of substrates.

A nozzle assembly for use in liquid-dispensing system, the nozzle assembly includes a pipe having lumens; a body, an end of the pipe being mounted to the body; the pipe having a wall and a septum, the wall enclosing a space, the septum dividing the space enclosed by the wall into the lumens; each of the lumens being correspondingly terminated in an orifice such that a liquid is escapable from each lumen through the corresponding orifice and is thereby dispensable from the nozzle assembly.

Provided is a support unit for supporting a substrate, the support unit including: a heating member configured to transmit thermal energy to a supported substrate; a reflective plate disposed under the heating member and configured to reflect thermal energy generated by the heating member to the substrate; a cooling plate disposed under the reflective plate and formed with a cooling flow path in which a cooling fluid flows; and a gas supply line configured to supply gas to a space between the reflective plate and the cooling plate.