A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.

A wafer transfer method for forming a second work unit by transferring a wafer of a first work unit including a first ring frame, a first adhesive tape, and the wafer to a second adhesive tape includes sandwiching a claw body between the first ring frame and a second ring frame, affixing the second adhesive tape to a surface of the wafer which surface is not affixed to the first adhesive tape, holding the wafer by the second ring frame via the second adhesive tape, and peeling off the first adhesive tape from the wafer.

A substrate processing method includes forming a liquid film of an alkaline processing liquid on a substrate by supplying the alkaline processing liquid having a reduced oxygen concentration onto the substrate; and etching the substrate by rotating the substrate while supplying the alkaline processing liquid in a state that the liquid film having a given thickness is formed on the substrate.

An apparatus comprises a first liquid input line, a second liquid input line, a third liquid input line, a first liquid flow controller with an input in fluid contact with the first liquid input line, a second liquid flow controller with an input in fluid contact with the second liquid input line, a third liquid flow controller with an input in fluid contact with the third liquid input line, a common manifold in fluid contact with an output of the first liquid flow controller and an output of the second liquid flow controller and an output of the third liquid flow controller, and a vaporizer with an input in fluid contact with the common manifold.

Disclosed is a substrate treating apparatus for performing treatment with supply of fluids to a substrate. The apparatus includes a first treatment housing, a treating section provided inside of the first treatment housing and configured to treat a substrate placed on a mount table with the fluids, a first fluid supplying section located on a first lateral side of the treating section, seen from a front side face where maintenance is performed to the first treatment housing, and configured to supply a first fluid of the fluids to the treating section, and a second fluid supplying section located on a second lateral side of the treating section, seen from the front side face, and configured to supply a second fluid of the fluids to the treating section.

A substrate processing apparatus includes a substrate holding section that holds a substrate, a processing tank that stores a processing liquid allowing the substrate held by the substrate holding section to be immersed in, and a plurality of bubble generating pipes that each supply a gas to the processing liquid to generate bubbles in the processing liquid. Of the plurality of bubble generating pipes, a flow rate of a gas supplied to an outer bubble generating pipe located below an outer region of the substrate immersed in the processing liquid differs from a flow rate of a gas supplied to an inner bubble generating pipe located below a central region of the substrate.

Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a first gas at a first flow rate to a substrate support disposed within an interior volume of a deposition chamber and at a second flow rate into the interior volume of the deposition chamber; decreasing the first flow rate of the first gas to a third flow rate; supplying DC power or DC power and an AC power for inducing an AC bias therebetween; supplying a second gas into the deposition chamber in a switching mode while supplying the first gas at the second flow rate and the third flow rate and increasing at least one of the DC power or AC power to increase the AC bias; and while supplying the second gas in the switching mode, depositing material from the target onto a substrate to form a barrier layer.

The substrate processing apparatus includes: a nozzle having a spout and adapted to spout SPM from the spout toward a substrate; a mixing portion communicating with the spout; a sulfuric acid-containing liquid supply device which recovers liquid supplied to and expelled from the substrate held by a substrate holding unit, prepares a sulfuric acid-containing liquid from the recovered liquid, and supplies the prepared sulfuric acid-containing liquid to the mixing portion; and a control device. The control device performs: a sulfuric acid-containing liquid preparing step of recovering SPM supplied to and expelled from the substrate and preparing the sulfuric acid-containing liquid; and an SPM spouting step of supplying the prepared sulfuric acid-containing liquid and hydrogen peroxide water to the mixing portion, mixing the sulfuric acid-containing liquid and hydrogen peroxide water together in the mixing portion to prepare SPM, and spouting the prepared SPM from the spout.

A cleaning apparatus includes a spinner table for holding a workpiece thereon, a cleaning nozzle for supplying cleaning water to the workpiece held on the spinner table, an ultrasonic vibrator for applying ultrasonic vibrations to the cleaning water supplied from the cleaning nozzle to the workpiece, a water layer forming unit for forming a layer of the cleaning water in a clearance between the cleaning nozzle and the workpiece, the water layer forming unit having a cover surrounding the cleaning nozzle, and a drain unit for draining the cleaning water out of the cleaning apparatus, the drain unit having a flow channel for allowing the cleaning water supplied from the cleaning nozzle to the workpiece to flow therethrough.

Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.