A substrate processing system includes substrate processing apparatuses and a group management device. The substrate processing apparatuses each include a plan creating section. The plan creating section creates a plan indicating a timing when a processing liquid is used and a flow rate of the processing liquid. The processing liquid is supplied to the substrate processing apparatuses from a single resource system. The group management device includes a processing section. The processing section determines whether the total flow rate of the processing liquid to be used by the substrate processing apparatuses exceeds a threshold value based on the plans created by the substrate processing apparatuses. When determining that the total flow rate exceeds the threshold value, the processing section instructs one of the substrate processing apparatuses to adjust the plan thereof.

Provided is a cleaning apparatus and a cleaning method for semiconductor wafers that can hinder a mist of a cleaning solution from being adhered to a surface of a semiconductor wafer during cleaning of the semiconductor wafer. In a cleaning apparatus 1 for a semiconductor wafer, a spin cup 20 has an annular side wall portion 21; an inclined portion 22 that is inclined toward the rotating table 13; and an annular bent portion 23. The height position h.sub.21 of the upper end portion 21c of the side wall portion 21 is set at a position lower than the height position h.sub.14a of the upper end portion 14a of the wafer retainer portion 14, and the inclination angle θ.sub.22 of the inclined portion to a horizontal plane and the width w of the inclined portion satisfy a formula (A):

θ.sub.22(°)≥−0.65×w (mm)+72.9°  (A)

A liquid chemical processing device that reduces variation in resist removal for each substrate includes: a processing tank (10a) in which resist removal processing is performed by immersing substrates (4) in a chemical (6); a plurality of holders (22) configured to hold the substrates (4) in a vertical posture; vertical drivers (20) configured to individually and vertically drive the holders (22); and a chuck (55) configured to disengageably chuck the substrates (4), wherein the vertical drivers (20) are configured to individually and vertically move the holders (22) between an immersed position where the substrates (4) are immersed in the chemical (6) and a non-immersed position where the substrates (4) are lifted up from the chemical (6), and the substrates (4) held by the holders (22) are subjected to the resist removal processing in a single wafer manner.

A substrate processing method capable of suppressing corrosion of a conductive material on a surface of a substrate by supplying a liquid having a reduced concentration of dissolved oxygen onto the substrate. The substrate processing method includes: dissolving an inert gas in a liquid at not less than a saturation solubility to replace oxygen dissolved in the liquid with the inert gas; generating bubbles of the inert gas in the liquid by depressurizing the liquid in which the inert gas is dissolved; and processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate.

The substrate treatment method includes a first decompressing step, a first pressurizing step, and a first atmospheric pressure step. In the first decompressing step, the inside of a chamber is in a decompressed state, and a first gas is supplied to a substrate inside the chamber. The first gas includes an organic solvent. The first pressurizing step is executed after the first decompressing step. In the first pressurizing step, mixed gas is supplied to the substrate inside the chamber, and the inside of the chamber is pressurized from the decompressed state to an atmospheric pressure state. The mixed gas includes an organic solvent and inert gas. The first atmospheric pressure step is executed after the first pressurizing step. In the first atmospheric pressure step, the inside of the chamber is maintained in the atmospheric pressure state, and at least any of liquid discharge treatment and substrate treatment is performed.

A substrate treatment method includes a first gas treating step, a water-repellency treatment step, and a spraying step. In the first gas treating step, a first gas is supplied to the substrate inside the chamber in a state in which the inside of the chamber is decompressed. The first gas includes gas of an organic solvent. The water-repellency treatment step is executed after the first gas treating step. In the water-repellency treatment step, the inside of the chamber is in the decompressed state, and a water-repellent agent is supplied to the substrate inside the chamber. The spraying step is executed after the water-repellency treatment step. In the spraying step, the inside of the chamber is in the decompressed state, and a first liquid is sprayed over the substrate inside the chamber. The first liquid includes liquid of an organic solvent.

A method for treating a substrate is provided. The method includes the following steps: performing a process of treating the substrate by dispensing a supercritical fluid onto the substrate. A treating fluid flows through a treating fluid supplying regulator regulating an amount of the treating fluid before dispensed onto the substrate. The treating fluid is heated to a set temperature or more by a first heater before passing through the treating fluid supplying regulator, and the treating fluid is heated by a second heater when the treating fluid is passed through the treating fluid supplying regulator. The temperature of the treating fluid is lowered in rear region of the treating fluid supplying regulator. The set temperature is a temperature that allows the lowered temperature to be maintained at a critical temperature or more.

A method of cleaning blind spots around a substrate supporting apparatus by controlling a position of the substrate supporting apparatus includes moving the substrate supporting apparatus relative to a ring and supplying a cleaning gas to an upper space of the substrate supporting apparatus.

Implementations of the present disclosure generally relate to an improved substrate support pedestal assembly. In one implementation, the substrate support pedestal assembly includes a shaft. The substrate support pedestal assembly further includes a substrate support pedestal, mechanically coupled to the shaft. The substrate support pedestal comprises substrate support plate coated on a top surface with a ceramic material.

A substrate processing method includes supplying a water-soluble polymer solution to a surface of a substrate having, on a surface of the substrate, a resist film on which no pattern is formed, after an immersion exposure process, hydrophilizing a surface of the resist film using the supplied water-soluble polymer solution, supplying, after the hydrophilizing, a cleaning liquid to the surface of the substrate while rotating the substrate to remove the water-soluble polymer solution that has not contributed to the hydrophilizing, and drying the substrate supplied with the cleaning liquid, wherein the water-soluble polymer solution has a pH value that allows an acid concentration in the resist film to fall within a permissible range.