A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

A substrate processing apparatus for cleaning and drying a substrate under processing, including supplying a cleaning liquid onto the substrate under processing to form a cleaning liquid layer, supplying a gas onto the substrate under processing to partially remove the cleaning liquid layer and thus generate a first dry region on the substrate under processing, expanding the first dry region to generate a second dry region by controlling the movement speed of the boundary between the cleaning liquid layer and the first dry region to be less than or equal to a predetermined speed, and further expanding the second dry region to generate a third dry region.

Provided is a cleaning sheet including a cleaning layer that may be suitably used for a transfer member to be transferred in a substrate processing apparatus, the cleaning sheet being capable of effectively suppressing an adsorption error. A direction from an end portion of a surface of the cleaning layer toward a center thereof when viewed from a normal direction with respect to the surface is defined as a center direction, a region occupied by a width of 10 mm from the end portion toward the center direction in the surface is defined as an end portion region, and a maximum thickness L of the cleaning layer in the normal direction in the end portion region and an average thickness T of the cleaning layer in the normal direction in a region of the cleaning layer excluding the end portion region have a relationship of L−T≤5 μm.

Gas-phase reactor systems and methods of cleaning same are disclosed. Exemplary systems include a cleaning gas diffuser within a reaction chamber to facilitate cleaning of components, such as a susceptor, within the reaction chamber. The cleaning gas diffuser can be configured to provide a flow of a cleaning reactant over one or more surfaces within the reaction chamber.

A learning device includes a hardware processor, wherein the hardware processor acquires a film thickness of a solid or a liquid formed on the substrate by driving a substrate processing device under a first condition, and causes a learning model to learn first training data including the film-thickness characteristic acquired by driving of the substrate processing device under the first condition.

A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.

There is provided a substrate processing apparatus, including: a substrate holding/rotating part configured to hold a substrate on a mounting table and rotate the substrate; a laser irradiation head configured to irradiate a laser beam toward a lower surface of the mounting table; and a controller configured to control at least the rotation of the substrate holding/rotating part and the irradiation of the laser beam. The laser irradiation head is fixed below the mounting table so as to be spaced apart from the mounting table. The controller controls the laser irradiation head to irradiate the laser beam when the mounting table is rotated by the substrate holding/rotating part.

A cleaning assembly may include a chuck. The cleaning assembly may include a plurality of lift pins positioned proximate to the chuck. The plurality of lift pins may be configured to engage a cleaning substrate and translate the cleaning substrate to allow the cleaning substrate to capture one or more particles from the surface of the chuck via at least one of electrostatic attraction or mechanical trapping when the cleaning substrate is positioned in the second position. The cleaning assembly may include a replaceable top skin coupled to the chuck and configured to capture the one or more particles.

Methods and apparatuses for integrated cleaning of objects comprising a sequence of wet cleaning and vacuum drying in a same process chamber. The present integrated cleaning process can eliminate moving parts, improving the system reliability. Vacuum decontamination can be included for degassing and decontaminating the cleaned objects. In an embodiment, a cleaner system combines various movements into an integrated movement to be handled by a robot, for example, to improve the throughput. For example, an integrated robot movement comprising picking up a closed container from the input load port, moving both the lid and body together, and then depositing the body and lid separately into the appropriate positions in the cleaner to be cleaned.

A substrate processing apparatus comprising a holding unit, a liquid supply unit, a recovery unit, a circulation path, a gas supply unit, and a control unit. The holding unit holds a substrate. The liquid supply unit supplies a processing liquid to a first major surface of the substrate being held by the holding unit. The recovery unit recovers the processing liquid that has been used for processing the substrate. The circulation path returns the processing liquid recovered by the recovery unit back to the liquid supply unit. The gas supply unit supplies a gas to a second major surface to the substrate being held by the holding unit opposite to the first major surface. The control unit controls the liquid supply unit and the gas supply unit. The control unit, when the processing liquid planned to be returned back to the liquid supply unit by the circulation path is supplied to the first major surface, causes the gas to be supplied to the second major surface.