A substrate liquid processing apparatus includes a processing tub configured to store a processing liquid therein; a processing liquid supply configured to supply the processing liquid into the processing tub; a processing liquid drain device configured to drain the processing liquid from the processing tub; and a controller configured to control the processing liquid supply and the processing liquid drain device. The controller calculates, in response to an instruction to change a concentration of a preset component of the processing liquid stored in the processing tub, a drain amount and a feed amount of the processing liquid from/into the processing tub based on information upon a current concentration of the preset component, information upon a concentration increment thereof per unit time and information upon the changed concentration thereof, and controls the processing liquid supply and the processing liquid drain device based on the calculation result.

A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to a position above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates that are exposed from the liquid surface. The controller changes an ejection flow rate of the vapor ejected by the ejector as the plurality of substrates are moved up.

The present disclosure provides a thin-film-deposition equipment with double-layer shielding device, which includes a reaction chamber, a carrier and a double-layer shielding device. The double-layer shielding device includes a first-shield member, a second-shield member, a first-guard plate, a second-guard plate and a driver. The first-guard plate is disposed on the first-shield member, the second-guard plate is disposed on the second-shield member. The driver interconnects the two shield members for driving and swinging the two shield members to move in opposite directions. During a cleaning process, the driver swings the two shield members toward each other into a shielding state for covering the carrier, the two guard plates thereon also approach each other to cover the shield members, such that to effectively prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

The present disclosure is a substrate-processing chamber with a shielding mechanism, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one guide unit, at least one connecting seat, a shield and at least one drive arm. The drive arm is connected to the shield for driving the shield to move between the storage chamber and the reaction chamber. During a deposition process, the drive arm drives the shield to move into the storage space. During a cleaning process, the drive arm moves the shield to move into the reaction chamber for prevent pollution to the substrate carrier.

A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

A substrate processing method that includes a processing liquid supplying step which supplies a processing liquid to a surface of a substrate, a processing film forming step in which the processing liquid on the surface of the substrate is solidified or cured to form a processing film that holds removal objects present on the surface of the substrate, and a removing step in which a removing liquid is supplied to the surface of the substrate to thereby remove the processing film from the surface of the substrate in a state that the removal objects are held by the processing film. The processing liquid contains a dissolution component which dissolves at least one of a front layer of the substrate and the removal objects as a dissolution object. The processing liquid supplying step includes a dissolution step which partially dissolves the dissolution object by the dissolution component in the processing liquid supplied to the surface of the substrate.

In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a wafer chuck configured to hold a substrate. Further, a bell jar structure is arranged over the wafer chuck such that an opening of the bell jar structure faces the wafer chuck. A plasma coil is arranged over the bell jar structure. An oxygen source coupled to the processing chamber and configured to input oxygen gas into the processing chamber.

A semiconductor processing tool may include a processing tank. The semiconductor processing tool may include an arm arranged to hold a plurality of wafers over the processing tank such that wafers in the plurality of wafers are horizontally stacked over the processing tank. The semiconductor processing tool may include a fan arranged over the arm to permit an airflow to be provided across surfaces of the wafers in a vertical direction toward the processing tank. The semiconductor processing tool may include an exhaust system including at least one exhaust output and one or more exhaust pipe segments arranged substantially around the processing tank and connected to the at least one exhaust output. The one or more exhaust pipe segments may include a plurality of openings to receive exhaust air to be provided to the at least one exhaust output.

The substrate processing method includes a liquid film forming step of forming a liquid film of a sulfuric acid-containing liquid on a principal surface of a substrate, an ozone-containing gas exposing step of filling an ozone-containing gas inside a processing chamber capable of housing the substrate to expose the liquid film to the ozone-containing gas, and a substrate heating step of heating the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas and the liquid film is also formed on the principal surface of the substrate.

The present invention relates to a substrate treatment apparatus including: a substrate support assembly having a chuck base installed rotatably with a rotating shaft; a fluid supply unit for supplying treatment fluid to top of a substrate; and a back nozzle assembly disposed in a hollow portion formed on a central portion of the chuck base to dispense the treatment fluid to the underside of the substrate.