The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step.

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

There is provided a technique that includes a first annealing step of annealing the reaction tube; a first cleaning step of cleaning an inner surface of the reaction tube, after the first annealing step, with a liquid including a fluorine compound having a first concentration; a first rinsing step of washing away the fluorine compound used in the first cleaning step with pure water; a second annealing step of annealing the reaction tube; a second cleaning step of cleaning the inner surface of the reaction tube, after the second annealing step, with a liquid including a fluorine compound having a second concentration higher than the first concentration; and a second rinsing step of washing away the fluorine compound used in the second cleaning step with pure water.

There is provided a substrate processing apparatus including: a substrate holder configured to hold a substrate on which a resist pattern is formed; a rinse solution supply unit configured to supply a rinse solution onto the substrate held by the substrate holder; a vapor supply unit configured to supply vapor of a first processing solution, which hydrophobicizes the resist pattern, onto the substrate on which the rinse solution is supplied from the rinse solution supply unit; and a rinse solution removing unit configured to remove the rinse solution from the substrate in an atmosphere including the vapor of the first processing solution supplied from the vapor supply unit.

A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.

A substrate processing apparatus includes: a substrate holder configured to hold a substrate while being locally superimposed on a back surface of the substrate; a light irradiator configured to irradiate the back surface with light so as to remove an organic substance on the back surface of the substrate; a light shielding member provided at a back side of the substrate while being spaced apart from the back surface so as to prevent the light from being supplied to a front surface of the substrate; and a holding position changing mechanism configured to change a holding position by the substrate holder on the back surface of the substrate so as to irradiate the entire back surface of the substrate with the light.

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

An arrangement includes a panel configured as a pre-form for manufacturing a plurality of component carriers; a protection layer covering a surface portion of a main surface of the panel, wherein the protection layer is detachable from the surface portion without leaving residues on the panel. A handling tool for handling the panel includes a surface onto which the panel is arrangeable. The panel includes a handling surface, with which the panel is arrangeable onto the handling tool, wherein the handling surface comprises at least part of the surface portion covered by the protection layer.

A cleaning system for processing a substrate after polishing includes a sulfuric peroxide mix (SPM) module, at least two cleaning elements, and a plurality of robots. The SPM module includes a sulfuric peroxide mix (SPM) cleaner having a first container to hold a sulfuric peroxide mix liquid and five to twenty first supports to hold five to twenty substrates in the liquid in the first container, and a rinsing station having a second container to hold a rinsing liquid and five to twenty second supports to hold five to twenty substrates in the liquid in the second container. Each of the at least two cleaning elements are configured to process a single substrate at a time. Examples of a cleaning element include a megasonic cleaner, a rotating brush cleaner, a buff pad cleaner, a jet spray cleaner, a chemical spin cleaner, a spin drier, and a marangoni drier.

There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.