Deposits such as particles deposited on a surface of a target object can be easily removed while suppressing damage to the target object such as destruction of pattern formed on the surface of the target object or film roughness on the surface of the target object. In a pre-treatment, vapor of a hydrogen fluoride is supplied to a wafer W to dissolve a natural oxide film 11, so that a deposit 10 attached to a surface of the natural oxide film 11 is slightly separated from a surface of the wafer W. A carbon dioxide gas that does not react with an underlying film 12 is supplied to a processing gas atmosphere where the wafer W is placed, so that a gas cluster of the carbon dioxide gas is generated. Then, the gas cluster in a non-ionized state is irradiated toward the wafer W to remove the deposit 10.

This invention provides a method and a system for cleaning a container for storing wafers or masks. A contained with lid is washed directly after the container is loaded with lid opened in the cleaning system. Gas exchange rate in the washing station can be increased such that particles or AMC inside the container or attached to the lid can be carried out more easily. Then, contamination-free gas is purged to the container as well as lid in a high temperature environment. A vacuum station can be optionally adapted between the washing station and the contamination-free gas purging station to enhance the cleanliness of the container.

A substrate processing apparatus includes: a substrate holder configured to hold a substrate; a processing liquid supply part configured to supply a processing liquid to the substrate held by the substrate holder; a chemical liquid supply part configured to supply a chemical liquid as a component of the processing liquid to the processing liquid supply part; a pure water supply part configured to supply pure water as a component of the processing liquid to the processing liquid supply part; a low-dielectric constant solvent supply part configured to supply a low-dielectric constant solvent as a component of the processing liquid to the processing liquid supply part; and a controller configured to control a ratio of the chemical liquid, the pure water, and the low-dielectric constant solvent contained in the processing liquid by controlling the chemical liquid supply part, the pure water supply part, the low-dielectric constant solvent supply part.

One or more embodiments described herein generally relate to drying environments within semiconductor processing systems. In these embodiments, substrates are cleaned and dried within a drying environment before returning to the factory interface. However, due to an opening between the factory interface and the drying environment, air flows from the factory interface into the drying environment, often reducing the effectiveness of the drying processes. In embodiments described herein, the air flow is blocked by a sliding door that raises up to the closed position when a substrate enters the drying portion of the dryer located within the drying environment. After the substrate exits the dryer and before the substrate enters the factory interface, the sliding door lowers to the opened position such that the substrate can enter the factory interface. As such, these processes allow for multiple substrates to dry quickly and consistently within the system, improving throughput.

A substrate processing apparatus includes a chamber body providing a processing space for drying a substrate with a drying fluid in a supercritical state, a substrate support chuck supporting the substrate in the processing space, a fluid supply unit including a fluid supply line configured to supply the drying fluid to the processing space, and a supply line heating unit configured to heat the fluid supply line.

A substrate drying device includes: an upper chamber body including an inlet configured to introduce supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration devices including a plurality of vibration modules configured to generate ultrasonic waves having different frequencies from each other, and substrate holders arranged on the plurality of vibration modules and configured to hold a wafer, wherein the plurality of vibration devices are arranged in the chamber space.

Provided is a method of treating a substrate, the method comprising: heating a treatment liquid with a heater unit installed in a circulation line while circulating the treatment liquid in a housing of a tank through the circulation line coupled to the housing to adjust a temperature of the treatment liquid; evaporating water in the treatment liquid in the housing by heating the treatment liquid to a temperature higher than a temperature of water contained in the treatment liquid by the heater unit to adjust a concentration of a chemical liquid contained in the treatment liquid; and supplying the treatment liquid of which the temperature and the concentration are controlled to a substrate to treat the substrate, in which the evaporation of water from the treatment liquid stored in the housing is accelerated by supplying gas to the treatment liquid flowing through the circulation line.

High-performance substrate cleaning apparatus, substrate cleaning method, substrate processing apparatus, and substrate drying apparatus are provided. A substrate cleaning apparatus, including: a substrate holding and rotating mechanism that holds and rotates a substrate; a first cleaning mechanism that brings a cleaning tool into contact with the substrate to clean the substrate, cleans the substrate using two-fluid jet, or cleans the substrate using ozone water; and a second cleaning mechanism that cleans the substrate using an ultrasonic cleaning liquid is provided.

Disclosed is a substrate treating apparatus including the following units: a supplying unit which supplies a process liquid including a sublimable substance in a melt state on a pattern-formed surface of a substrate W; a solidifying unit which solidifies the process liquid on the pattern-formed surface to produce a solidified body; and a sublimating unit which sublimates the solidified body to remove the solidified body from the pattern-formed surface. In this apparatus, the sublimable substance includes a fluorinated carbon compound.

A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.