A wafer edge polishing apparatus includes a cleaning mechanism exhibiting a superb effect of cleaning slurry residue adhered on a chuck table. This edge polishing device is provided with: a chuck table which sucks/holds a wafer; a rotation drive mechanism which rotates the chuck table; an edge polishing unit which polishes an edge of the wafer while supplying slurry to the wafer, which is rotating while being sucked/held by the chuck table; and a cleaning unit which removes slurry residue on the chuck table. The cleaning unit includes a cleaning head, and cleans the chuck table through high-pressure cleaning and brush-cleaning by using the cleaning head, wherein the cleaning head is provided with a high-pressure jet nozzle and a brush surrounding the periphery of the high-pressure jet nozzle.

The inventive concept provides an apparatus and method for removing a film formed on a substrate. A method for treating the substrate includes a primary solvent dispensing step of dispensing an organic solvent onto the substrate to remove a photoresist film on the substrate and an ozone dispensing step of dispensing a liquid containing ozone onto the substrate to remove organic residue on the substrate, after the primary solvent dispensing step.

Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

A device is for drying disc-shaped substrates. The device has an elongated body, which tapers upwards to form a wedge having an angle α between two upper surfaces and an upper edge. The upper edge is configured to support a disc-shaped substrate. An upper surface of the two upper surfaces has a groove having an increasing groove depth with increasing distance from the upper edge.

A device is for drying disc-shaped substrates. The device has an elongated body having a top surface, a bottom surface, and a circumferential surface. The elongated body has a hole in the top surface forming a channel, which extends to a lower drainage part of the elongated body, and is chamfered having a chamfer depth and a chamfer angle forming an edge between the chamfer and the top surface and forming a conical recess suitable for resting a disc shaped substrate. The chamfer angle is more than 10° and less than 30°. The chamfer depth is more than 6 mm and less than 12 mm.

A semiconductor processing system includes a semiconductor processing chamber, a pump, an exhaust line in fluid communication with the chamber through the pump, and a steam generator and reactor. The steam generator and reactor has a process conduit with an inlet in line in the exhaust line for generating superheated steam and effecting transformations of chemicals in the exhaust fluid flowing in exhaust line into the inlet.

A reticle pod is provided. The reticle pod includes a container and a fluid regulating module mounted to the container. The fluid regulating module includes a first cap, a second cap and a sealing film. The first cap and the second cap are connected to each other. A flowing path is formed between the first cap and the second cap for allowing a fluid passing through the fluid regulating module. The sealing film is positioned between the first cap and the second cap and configured for regulating a flow of the fluid passing through the flowing path.

An apparatus for transferring a substrate is disclosed herein. More specifically, the apparatus relates to substrate handling systems used in semiconductor device manufacturing, and more particularly, to substrate handling systems having a substrate handler with enclosed moving elements and increased compatibility with post-CMP cleaning modules. The apparatus includes one or more indexing assemblies. Each of the indexing assemblies including an enclosure, an actuator assembly disposed within the enclosure, and two handling blades disposed outside of the disclosure. Each of the two blades are moveable in either of a translational or a rotating manner.

A technique capable of shortening process time for plasma cleaning is provided. A method of manufacturing a semiconductor device includes a step of preparing a substrate including a plurality of device regions each including a semiconductor chip electrically connected to a plurality of terminals formed on a main surface by a wire, a step of delivering the substrate while emitting plasma generated in atmospheric pressure to the main surface of the substrate, a step of delivering the substrate while capturing an image of a region of the main surface of the substrate and a step of forming a sealing body by sealing the semiconductor chip and the wire with a resin.

A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.