A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

Proposed are a part having a corrosion-resistant layer that minimizes peeling off and particle generation of a porous ceramic layer, a manufacturing process apparatus having the same, and a method of manufacturing the part.

A substrate liquid processing method includes holding a substrate W with a substrate holder 52; supplying a plating liquid L1 onto a top surface of the substrate; covering the substrate with a cover body 6 disposed above the held substrate, the cover body having a ceiling portion 61; and heating the plating liquid on the substrate by a heating unit 63 provided in either one of at least the cover body and the substrate holder in a state that the substrate is covered with the cover body. A gas exhausting operation of pushing out a reaction gas staying between the cover body and the substrate by moving either one of at least the cover body and the substrate holder vertically is performed in the heating of the plating liquid.

Embodiments of the present disclosure provide a semiconductor machine cleaning system and a semiconductor machine cleaning method. The semiconductor machine cleaning system includes: an acquisition module, configured to determine whether a semiconductor machine has contamination particles thereon, and to acquire position information of the contamination particles; and a cleaning module, configured to clean the contamination particles based on the position information before the semiconductor machine executes a next manufacturing process; where the contamination particles are cleaned by means of pressure extraction.

The current disclosure relates to a vapor deposition assembly for depositing material on a substrate. The vapor deposition assembly comprises a treatment chamber for treating susceptors from a deposition chamber that comprises multiple, moveable susceptors. The assembly further comprises a transfer system configured and arranged to move a susceptor between the deposition chamber and the treatment chamber. The disclosure further relates to a method of cleaning as susceptor and to a susceptor treatment apparatus.

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

A substrate processing apparatus includes a liquid processing module, including a carry-out/in port of a substrate, in which a first liquid processing device and a second liquid processing device provided at a position farther from the carry-out/in port than the first liquid processing device is are provided; and a transfer device configured to carry the substrate out from and into the liquid processing module. The first liquid processing device performs a first liquid processing on the substrate. The second liquid processing device performs a second liquid processing on the substrate before or after the first liquid processing. The transfer device includes a substrate holder configured to be moved back and forth in a first horizontal direction, and carries the non-processed substrate into the first liquid processing device through the carry-out/in port and carries the processed substrate out from the first liquid processing device through the carry-out/in port.

A substrate processing apparatus includes a polishing member having a polishing surface configured to perform a polishing of a main surface of a substrate; a first dressing member having a first dressing surface configured to perform a dressing of the polishing surface; a second dressing member having a second dressing surface configured to perform a dressing of the first dressing surface; a holding member configured to hold the polishing member and the second dressing member; and a driving unit configured to, by moving the holding member, switch a first state in which the first dressing surface and the polishing surface come into contact with each other to perform the dressing of the polishing surface and a second state in which the first dressing surface and the second dressing surface come into contact with each other to perform the dressing of the first dressing surface.

A particle removed from a substrate is suppressed from adhering to the substrate again. A substrate cleaning apparatus includes a substrate holder configured to hold the substrate; a gas nozzle configured to jet a cleaning gas to the substrate on the substrate holder; and a nozzle cover provided to surround the gas nozzle. The cleaning gas is jetted to a decompression chamber of the nozzle cover from the gas nozzle, and a gas cluster configured to remove the particle on the substrate in the decompression chamber is generated. A gas for a gas curtain is jetted from an end portion of the nozzle cover toward the substrate, and the gas curtain is formed between the substrate and the end portion of the nozzle cover.