In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.

Implementations of the present disclosure include methods and apparatuses utilized to reduce particle generation within a processing chamber. In one implementation, a lid for a substrate processing chamber is provided. The lid includes a cover member having a first surface and a second surface opposite the first surface, a central opening through the cover member, wherein an inner profile of the central opening includes a first section having a first diameter, a second section having a second diameter, and a third section having a third diameter, wherein the second diameter is between the first diameter and the third diameter, and the first diameter increases from the second section toward the first surface of the cover member, and a trench formed along a closed path in the first surface and having a recess formed in an inner surface of the trench.

A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. A substrate may be electrostatically secured to an electrostatic chuck within a chamber of an etch reactor. A first plasma may be provided into the chamber to etch the substrate, causing an etchant byproduct to be generated. After the etching is complete, a second plasma may be provided into the chamber, wherein the second plasma is an oxygen containing plasma. The etchant byproduct may be removed and the first substrate may be discharged using the second plasma. The first substrate may be removed from the chamber and a second substrate may be inserted into the chamber without first performing an in-situ cleaning between the removal of the first substrate and the insertion of the second substrate.

An etching method includes preparing a substrate in which titanium nitride and molybdenum or tungsten are present, and etching the titanium nitride by supplying a processing gas including a ClF.sub.3 gas and a N.sub.2 gas to the substrate, wherein in the etching the titanium nitride, a partial pressure ratio of the ClF.sub.3 gas to the N.sub.2 gas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.

An etching apparatus includes a reaction chamber having an internal space; an upper electrode in the reaction chamber; a fixing chuck in the internal space of the reaction chamber and below the upper electrode; an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; a focus ring surrounding the electrostatic chuck; and a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring. The plurality of sealing members may be formed of a porous material. Each of the plurality of sealing members may include a body portion and an outer surface surrounding the body portion. Only the body portion may include voids and the outer surface may be smooth and free of voids.

A system for performing a bevel cleaning process on a substrate includes a substrate support including an electrode and a plurality of plasma needles arranged around a perimeter of the substrate support. The plasma needles are in fluid communication with a gas delivery system and are configured to supply reactive gases from the gas delivery system to a bevel region of the substrate when the substrate is arranged on the substrate support and electrically couple to the electrode of the substrate support and generate plasma around the bevel region of the substrate.

A gas distribution plate for a substrate processing system includes an outer ring including a stepped interface on a radially inner surface thereof and N inner rings, where N is an integer greater than zero. At least one of the N inner rings is circumferentially segmented and includes an inner stepped interface and an outer stepped interface. An outer stepped interface of a radially outer one of the N inner rings is configured to rest on and mate with the inner stepped interface of the outer ring. A center portion includes an outer stepped interface on a radially outer surface thereof that is configured to rest on and mate with an inner stepped interface of a radially inner one of the N inner rings.

Embodiments of the present disclosure generally relate to an integrated substrate processing system for cleaning a substrate surface and subsequently performing an epitaxial deposition process thereon. A processing system includes a film formation chamber, a transfer chamber coupled to the film formation chamber, and an oxide removal chamber coupled to the transfer chamber, the oxide removal chamber having a substrate support. The processing system includes a controller configured to introduce a process gas mixture into the oxide removal chamber, the process gas mixture including a fluorine-containing gas and a vapor including at least one of water, an alcohol, an organic acid, or combinations thereof. The controller is configured to expose a substrate positioned on the substrate support to the process gas mixture, thereby removing an oxide film from the substrate.

A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.