An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.

The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.

The inventive concept relates to a substrate heating unit. The substrate heating unit includes a chuck stage having an inner space defined by a base and sidewalls, a heating unit provided in the inner space of the chuck stage, and a quartz window that covers the inner space of the chuck stage and has an upper surface on which the substrate is placed. The heating unit includes a heating plate having a disk shape with an opening in the center thereof and heating modules installed in respective heating zones on the heating plate that are divided from each other, each heating module having a printed circuit board on which heating light sources emitting light for heating are mounted.

A heat treatment apparatus includes: a processing container extended in a vertical direction; and a heater provided to surround the processing container. The heater includes: a first insulator of a cylindrical shape that has a ceiling surface and an opening at a lower end; a heat generator provided along a circumferential direction on an inner circumferential side of the first insulating member; and a second insulator arranged along the circumferential direction of the first insulating member at a position adjacent to the heat generating elements.

Provided are a substrate transporting apparatus capable of preventing an increase in temperature of a transporting robot by installing a cooling plate around the transporting robot, and a substrate treating system including the same. The substrate transporting apparatus includes a transporting unit for transporting a substrate; and a cooling plate for controlling a temperature of the transporting unit, wherein the cooling plate is spaced apart from a side surface of the transporting unit and installed as a side wall, or is installed in close contact with the side surface of the transporting unit.

Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming, during a first duration of time comprising a first time, a top clamp comprising a first set of electrodes and a plurality of burls. The method can further include forming, during a second duration of time comprising a second time that overlaps the first time, a core comprising a plurality of fluid channels configured to carry a thermally conditioned fluid. The method can further include forming, during a third duration of time comprising a third time that overlaps the first time and the second time, a bottom clamp comprising a second set of electrodes. In some aspects, the example method can include manufacturing the electrostatic clamp without an anodic bond.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base provided on a bottom surface side of the ceramic base, and a refrigerant flow channel groove provided in the cooling base so as to open at a bottom surface of the cooling base.

The present disclosure relates to heating a substrate in a rapid thermal processing (RTP) chamber. The chamber may contain a rotatable assembly configured to accommodate and rotate the substrate while a heat source inside the RTP chamber applies heat to the substrate. The rotatable assembly is partially disposed outside the RTP chamber. A seal may formed around the rotatable assembly and maintain a vacuum inside the RTP chamber while the rotatable assembly rotates. The rotatable assembly may configured to accommodate various-sized substrates.

A semiconductor manufacturing method using a semiconductor manufacturing apparatus 100 including a treating chamber 1, the method including: a first process of supplying a complexing gas into the treating chamber in which a wafer 2 having a surface having a transition metal-containing film formed thereon is placed, to adsorb an organic compound as a component of the complexing gas to the transition metal-containing film, the transition metal-containing film containing a transition metal element; and a second process of heating the wafer in which the organic compound is adsorbed to the transition metal-containing film, to react the organic compound with the transition metal element, thereby converting the organic compound into an organometallic complex, and desorbing the organometallic complex, wherein the organic compound has Lewis basicity, and is a multidentate ligand molecule capable of forming a bidentate or more coordination bond with the transition metal element.