Provided is a bonding apparatus including a first wafer supplier including a plurality of load ports configured to store wafers having different sizes, the wafers including a plurality of substrate wafers and a plurality of die supply wafers, a first transferer adjacent to the first wafer supplier and configured to transfer the wafers, a first bonding device and a second bonding device facing the first wafer supplier, and configured to receive the wafers from the first wafer supplier and perform bonding, and a first cleaner comprising a plurality of cleaning areas, each of which is configured to receive the plurality of substrate wafers and the plurality of die supply wafers by the first transferer, and clean the plurality of substrate wafers and the plurality of die supply wafers.

At least one laser sensor and a controller are embedded into a substrate processing system communicating with a remote big data and machine learning server receiving/sending data from/to a fleet of substrate processing systems for autonomous process control and optimization. The laser sensor is arranged proximate to a region of the substrate processing system and is configured to capture first data from at least one of an edge coupling ring and a semiconductor substrate transported from/to the processing chamber to/from the region. The controller is configured to receive the first data from the laser sensor, process the first data to generate second data, transmit the second data to a remote server via a network, receive third data from the remote server via the network in response to sending the second data to the remote server, and operate the substrate processing system based on the third data for process optimization.

A film-forming method of embedding ruthenium in a substrate having a recess includes: (a) providing the substrate in a processing container; (b) supplying a gas containing a ruthenium raw material gas into the processing container to form a ruthenium layer; (c) annealing the ruthenium layer; and (d) supplying a gas containing an ozone gas into the processing container to etch the ruthenium layer, wherein (b), (c), and (d) are repeatedly executed in this order.

Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

A wafer processing apparatus may include a plurality of equipment front end modules (EFEMs), a wafer transfer chamber, a wafer processing chamber, and a wafer transfer arm. Each of the plurality of EFEMs may include an EFEM chamber, a plurality of load ports provided at a side of the EFEM chamber, and a load lock provided at a side of the EFEM chamber to overlap with at least one of the plurality of load ports in a vertical direction.

A processing apparatus group management system manages operational statuses of a processing apparatus group that is a group of substrate processing apparatuses. This system includes an information storage, a display, and a display controller. The information storage stores apparatus-specific information specific to each substrate processing apparatus, and apparatus operational information relating to the operational statuses of substrate processing apparatuses and continuously transmitted from the substrate processing apparatuses. The display controller causes the display to display the operational status of each substrate processing apparatus as an operational status table in accordance with the apparatus-specific information and the apparatus operational information about the substrate processing apparatus. The operational status table includes display items including an apparatus identifier used to identify each substrate processing apparatus, and the number of times an abnormal processing stop occurs in each substrate processing apparatus. This allows collective management of the operations statuses of the substrate processing apparatuses.

A manufacturing process of an electronic device including the following steps is provided: placing a reaction part in a pre-reaction chamber; performing a pre-reaction process on the reaction part placed in the pre-reaction chamber; after performing the pre-reaction, transferring the reaction part from the pre-reaction chamber to a reaction chamber; placing a process device in the reaction chamber with the reaction part placed therein; and performing a reaction process on the process device placed in the reaction chamber.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); wherein said external robot (500) comprises an articulated arm (510) arranged to handle both treated substrates and untreated substrates as well as substrates support devices.

The present disclosure provides a load-bearing device telescopic relative to a reference object, a wafer transfer device, a chamber device which is configured to exchange wafers between different pressure environments, and a wafer processing apparatus, the load-bearing device including a base, a movable platform opposite to the base, an ejector rod which is configured to extend through a bearing secured to the base and is coupled to the movable platform, and a driving member which is fixed relative to the reference object and is configured to push against the ejector rod and in turn to drive the ejector rod to displace relative to the base. The bearing device further includes a corrugated tube assembly, surrounding the ejector rod and includes a first corrugated tube sleeved on the ejector rod, the ejector rod and the first corrugated tube cooperating with each other to define collectively a first space.

The present disclosure provides a chamber device, which includes a housing, which defines an cavity therein, a first valve, provided on a first side of the housing, and configured to switch between a closed condition thereof, and an opened condition thereof where the housing is in communication with one of the first pressure environment and the second pressure environment therethrough, a switching device, fixed to the housing, and configured to align the first valve with a respective inlet of the one of the first pressure environment and the second pressure environment, a second valve, provided on a second side of the housing opposite to the first side, and configured to communicate the cavity with the first pressure environment or disconnect the cavity from the first pressure environment, and a pressure regulating device, provided on the housing and in communication with the cavity .