The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space therein; a fluid supply unit having a supply line configured to supply a treating fluid to the inner space and a fluid supply source configured to supply the treating fluid to the supply line; a first exhaust unit configured to exhaust the inner space; a second exhaust unit configured to exhaust the supply line; and a controller configured to control the fluid supply unit, the first exhaust unit, and the second exhaust unit, and wherein the controller controls the fluid supply unit and the second exhaust unit so a pressure of the supply line is maintained at a critical pressure of the treating fluid or above during at least a part of a standby step for keeping a substrate outside the inner space before introducing thereof into the inner space.

A substrate processing apparatus processes a surface of a substrate with a processing fluid and includes a support tray in which a concave part for housing the substrate is provided on an upper surface thereof; a storage container in which a cavity is formed, wherein the support tray may be stored in a horizontal posture in the cavity; and a fluid supply part supplying the processing fluid to the cavity, wherein the storage container has a flow path which receives the processing fluid and discharges the processing fluid in a horizontal direction into the cavity from a discharge port that opens on a side wall surface of the cavity and toward the cavity, and a lower end position of the discharge port in a vertical direction is the same as or higher than a position of the upper surface of the support tray stored in the cavity.

A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

A system includes a programmable logic control (PLC) module, an input/output (IO) network bus coupled to the PLC module and provided at facets of a mainframe. A first process chamber attached to a first facet of the facets. A chamber interface IO sub-module is attached to the first facet and coupled to the IO network bus and to a process chamber IO controller of the first process chamber. The chamber interface IO sub-module is to: convert interlock relay signals, received via dry contact exchange with the process chamber IO controller, to digital signals; combine the digital signals into network packets adapted for communication using a protocol of the IO network bus; and transmit the network packets to the PLC module over the IO network bus.

Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

A substrate processing apparatus, includes a reaction chamber, an outer chamber at least partly surrounding the reaction chamber wherein an intermediate space is formed between the reaction chamber and the outer chamber, at least one heater element, at least one heat distributor in the intermediate space, and at least one heater element feedthrough in the outer chamber allowing at least a part of the at least one heater element to pass through into the intermediate space and to couple with the at least one heat distributor.

Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma processing chamber. In some embodiments, apparatus for high pressure plasma processing includes: an electrostatic chuck; a ground return bracket spaced apart from the electrostatic chuck; and a dielectric plate disposed between the electrostatic chuck and the ground return bracket.