According to one aspect of a technique of the present disclosure, there is provided a substrate processing apparatus includes: a substrate support; a process chamber; an upstream side gas guide including: a housing connected to a side portion of the process chamber and extending in a direction away from the process chamber; and partition plates arranged in a vertical direction in the housing; a distributor provided with ejection holes arranged in the vertical direction such that a gas is capable of being supplied through the ejection holes between adjacent partition plates, between the housing and an uppermost partition plate or between the housing and a lowermost partition plate; and a process chamber heater provided between the process chamber and the distributor such that a part thereof is located near an adjacent portion of the housing.

Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.

A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a body; a fluid supply unit for supplying a treating fluid to a treating space within the body; and a fluid exhaust line for exhausting the treating fluid from the treating space, and wherein the body includes: a first body; a second body relatively moving with respect to the first body; and an anti-friction member for preventing a friction between the first body and the second body, and wherein the anti-friction member is configured continuously cover at least two surfaces among surfaces of the first body and the second body.

The present disclosure generally provides for a system and method for measuring one or more characteristics of one or more substrates in a multi-station processing system using one or more metrology modules at a plurality of metrology stations. In one embodiment, a system controller is configured to cause the multi-station processing system to perform a method that includes processing a plurality of substrates at a plurality of processing stations, advancing one or more of the plurality of substrates to a respective metrology station, measuring one or more characteristics of the plurality of substrates at the respective metrology station, determining a processing performance metric based on the one or more characteristics, comparing the processing performance metric to a tolerance limit to determine if an out of tolerance condition has occurred, and adjusting one or more processing parameters when it is determined that an out of tolerance condition has occurred.

A method includes estimating a replacement time of a consumable part of a processing device, specifying a timing after substrate processing of the processing device is completed in a period before the replacement time as a replaceable timing of the consumable part, estimating a movement time period required for the part transporting device to move to a position of the processing device requiring the replacement, and estimating a preparation time period required for preparation until the part transporting device moved to the position of the processing device requiring the replacement becomes a state in which the consumable part is replaceable. The method further includes transmitting a replacement instruction to the part transporting device at a timing before a timing that is earlier than the replaceable timing by a total time of the movement time period and the preparation time period, and instructing the replacement of the consumable part.

A substrate processing system includes a chamber group including chambers configured to process a substrate in a desired process gas, a gas box group including gas boxes configured to supply the process gas to each of the chambers, a flow rate measuring device configured to measure a flow rate of the process gas supplied from the gas box group, and an exhaust device connected to the chamber group and the flow rate measuring device. The flow rate measuring device includes a measuring instrument and a measurement pipe connected to the gas box group and the measuring instrument and configured to flow the process gas through the gas box group and the measuring instrument. The measurement pipe includes branch pipes connected to each of the gas boxes, a main pipe connected to each of the branch pipes and the measuring instrument, and branch pipe valves provided in the branch pipes.

A system includes a semiconductor apparatus configured to process a workpiece, a mist generator configured to generate a mist and a particle separator configured to receive an exhaust gas generated by the semiconductor apparatus. The particle separator includes a first fan, wherein the first fan includes a plurality of blades. Each of the plurality of blades includes holes allowing the exhaust gas and the mist to pass through.

Each of branch pipes has an internal space into which an atmosphere flows from a main pipe. A downstream damper is provided on the downstream side of an upstream damper in each of the branch pipes, and opens/closes the branch pipe. An upstream switching member switches a state of an upstream space between a state where the upstream space permits an inflow of an external atmosphere and a state where the upstream space prohibits the inflow of the external atmosphere. A downstream switching member switches a state of a downstream space between a state where the downstream space permits an inflow of the external atmosphere and a state where the downstream space prohibits the inflow of the external atmosphere.

A method for treating a substrate is provided. The method includes the following steps: performing a process of treating the substrate by dispensing a supercritical fluid onto the substrate. A treating fluid flows through a treating fluid supplying regulator regulating an amount of the treating fluid before dispensed onto the substrate. The treating fluid is heated to a set temperature or more by a first heater before passing through the treating fluid supplying regulator, and the treating fluid is heated by a second heater when the treating fluid is passed through the treating fluid supplying regulator. The temperature of the treating fluid is lowered in rear region of the treating fluid supplying regulator. The set temperature is a temperature that allows the lowered temperature to be maintained at a critical temperature or more.