Embodiments of the semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (κ value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.

The present disclosure provides a thin-film-deposition equipment with double-layer shielding device, which includes a reaction chamber, a carrier and a double-layer shielding device. The double-layer shielding device includes a first-shield member, a second-shield member, a first-guard plate, a second-guard plate and a driver. The first-guard plate is disposed on the first-shield member, the second-guard plate is disposed on the second-shield member. The driver interconnects the two shield members for driving and swinging the two shield members to move in opposite directions. During a cleaning process, the driver swings the two shield members toward each other into a shielding state for covering the carrier, the two guard plates thereon also approach each other to cover the shield members, such that to effectively prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

The present disclosure is a substrate-processing chamber with a shielding mechanism, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one guide unit, at least one connecting seat, a shield and at least one drive arm. The drive arm is connected to the shield for driving the shield to move between the storage chamber and the reaction chamber. During a deposition process, the drive arm drives the shield to move into the storage space. During a cleaning process, the drive arm moves the shield to move into the reaction chamber for prevent pollution to the substrate carrier.

To provide a highly productive, compact, and inexpensive film deposition apparatus while ensuring the stability of the film deposition quality, the apparatus includes a rotating body configured to be rotatable and provided with a holding unit that holds an object to be transferred in an attachable and detachable manner, the holding unit being provided along an outer peripheral portion of the rotating body; and a transfer mechanism having a gripping mechanism capable of gripping and releasing the object, the transfer mechanism transferring the object held by a predetermined device to the holding unit of the rotating body and transferring another object held by the rotating body to the predetermined device.

A processing apparatus includes a chuck configured to hold a substrate; a moving unit to which a processing tool configured to process the substrate is mounted; a sprinkler configured to spray a cleaning liquid configured to clean the moving unit from an outside of the moving unit; and a housing accommodating the chuck, the processing tool, and the sprinkler therein. The sprinkler includes a fixed unit fixed to an inside of the housing, and a rotating unit rotatably supported at the fixed unit. The rotating unit includes a nozzle configured to discharge the cleaning liquid, and a rotation block configured to hold the nozzle.

A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.

An embodiment of the present application provides a semiconductor etching device, comprising: an air delivery chamber (21), configured to accommodate a wafer (22) to be etched; an air intake module (23), configured to feed air into the air delivery chamber (21); an air exhaust module, configured to exhaust air in the air delivery chamber (21), the air exhaust module comprising an airlock (27) and a wind speed measurement and control unit (28), the wind speed measurement and control unit (28) being configured to detect an air flow rate in the air delivery chamber (21) and adjust the degree of opening of the airlock (27) based on the air flow rate.

Disclosed is a powder atomic layer deposition equipment with a quick release function, comprising a vacuum chamber, a shaft sealing device, and a driving unit connected to the shaft sealing device. The vacuum chamber is connected to the shaft sealing device, and an enclosed space is formed between the vacuum chamber and the shaft sealing device. At least one air extraction line is located in the shaft sealing device and fluidly connected to the enclosed space, the air extraction line being used in pumping gas out from the enclosed space to fix the vacuum chamber to the shaft sealing device so that the drive unit rotates the vacuum chamber via the shaft sealing device to facilitate the formation of a uniform thin film on powder surface. When the pumping stops, the vacuum chamber can be quickly released from the shaft sealing device to improve the process efficiency and convenience of use.

A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a gap sensor configured to generate sensor signals indicative of a gap between the wafer and the top plate. The system includes a control system configured to adjust the gap during the thin-film deposition process responsive to the sensor signals.

Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.