One or more embodiments described herein generally relate to methods and systems for monitoring film thickness using a sensor assembly. In embodiments described herein, a process chamber having a chamber body, a substrate support disposed in the chamber body, a lid disposed over the chamber body, and a sensor assembly coupled to the chamber body at a lower portion of the sensor assembly. The sensor assembly is coupled to the lid at an upper portion of the sensor assembly. The sensor assembly includes one or more apertures disposed through one or more sides of the sensor assembly, and the one or more sensors are disposed in the sensor assembly through the one or more of the apertures.

Embodiments of the present disclosure provide a heated support pedestal including a body comprising a ceramic material, a support arm extending radially outward from a periphery of the body that is coupled to a shaft, and a vacuum conduit disposed within the shaft and through the body to connect with a surface of the body.

Various embodiments herein relate to methods and apparatus for depositing silicon oxide using thermal ALD or thermal CVD. In one aspect of the disclosed embodiments, a method for depositing silicon oxide is provided, the method including: (a) receiving the substrate in a reaction chamber; (b) introducing a first flow of a first reactant into the reaction chamber and exposing the substrate to the first reactant, where the first reactant includes a silicon-containing reactant; (c) introducing a second flow of a second reactant into the reaction chamber to cause a reaction between the first reactant and the second reactant, (i) where the second reactant includes hydrogen (H2) and an oxygen-containing reactant, (ii) where the reaction deposits silicon oxide on the substrate, and (iii) where the reaction is initiated when a pressure in the reaction chamber is greater than 10 Torr and equal to or less than about 40 Torr.

An apparatus for treating a substrate includes a heat treatment chamber having an interior space, a housing that is provided in the interior space and that has a treatment space therein, a gas supply line that supplies, into the treatment space, a hydrophobic gas for hydrophobicizing the substrate, and a decomposition unit that decomposes an alkaline gas leaking from the treatment space to the interior space.

An apparatus for treating a substrate includes a chamber having a treating space formed therein, a substrate support unit that supports the substrate in the treating space, a plate that is located to face the substrate support unit in the treating space and that has a plurality of holes formed therein, a gas supply unit that supplies gas into the treating space through the holes, and a gas exhaust unit that exhausts the gas in the treating space through the holes.

In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value. The first heating mechanism and the second heating mechanism can be independently tuned to any value in the working range.

A substrate processing apparatus includes: a vacuum transfer chamber including a substrate transfer mechanism provided in a vacuum transfer space thereof to collectively hold and transfer substrates with a substrate holder; and a processing chamber having processing spaces and connected to the vacuum transfer chamber. The processing chamber includes a loading/unloading port provided on a side of the vacuum transfer chamber to allow the vacuum transfer space and the processing spaces to communicate with each other. The processing spaces include a first processing space in which a first process is performed on the substrate and a second processing space in which a second process is performed on the substrate subjected to the first process. The first and second processing spaces are arranged in a direction in which the substrate is loaded and unloaded, and the substrate holder has a length that extends over the first and second processing spaces.

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

A grounding cap module includes a main body, a frame portion, and a cap portion. The main body includes a first opening penetrating the main body and a grounding portion disposed on a periphery of the main body and configured to be electrically grounded. The frame portion is disposed on the main body and includes a second opening aligned with the first opening. The cap portion is disposed on the frame portion and covers the second opening, wherein the first opening, the second opening and the cap portion define a receiving cavity. A gas injection device and an etching apparatus using the same are also provided.