A method includes flowing gas comprising an oxidation inhibiting gas into a chamber of a semiconductor processing system. The chamber includes one or more of a factory interface of the semiconductor processing system or an adjacent chamber that is mounted to the factory interface. The method further includes receiving, via one or more sensors coupled to the chamber, sensor data indicating at least one of a current oxygen level within the chamber or a current moisture level within the chamber. The method further includes determining, based on the sensor data, whether to perform an adjustment of a current amount of the oxidation inhibiting gas entering into the chamber. The method further includes, responsive to determining to perform the adjustment, causing the adjustment of the current amount of the oxidation inhibiting gas entering into the chamber.

A vapor deposition device is provided that can correct a positional offset of a carrier in a rotation direction relative to a wafer when the vapor deposition device is viewed in a plan view. The vapor deposition device includes a load-lock chamber provided with a holder for supporting the carrier, and the carrier and the holder are provided with a correction mechanism that corrects a position of the carrier in a rotation direction when the vapor deposition device is viewed in a plan view.

A transfer apparatus including a frame, multiple arms connected to the frame, each arm having an end effector and an independent drive axis for extension and retraction of the respective arm with respect to other ones of the multiple arms, a linear rail defining a degree of freedom for the independent drive axis for extension and retraction of at least one arm, and a common drive axis shared by each arm and configured to pivot the multiple arms about a common pivot axis, wherein at least one of the multiple arms having another drive axis defining an independent degree of freedom with respect to other ones of the multiple arms.

A substrate transport method is employed in a substrate processing system including a plurality of processing chambers, a load lock chamber, a vacuum transport device provided in a vacuum transport chamber connecting the load lock chamber and the plurality of processing chambers and configured to simultaneously transport a plurality of substrates, and an atmospheric transport device provided in an atmospheric transport chamber and configured to transport a substrate from a carrier to the load lock chamber. The substrate transport method includes acquiring in advance a relative positional error for a case where the plurality of substrates are transported from the load lock chamber to the plurality of processing chambers and placed on a stage in the plurality of processing chambers, and placing the plurality of substrates on a stage in the load lock chamber, based on a transport path of the plurality of substrates and the relative positional error.

A semiconductor substrate processing apparatus includes a substrate transfer module including a chamber having an internal space extending in a first direction within the chamber, at least one pair of first load ports at opposite sides of the chamber, to face in a second direction intersecting the first direction, and configured to rotate and move a substrate carrier, a load lock at a rear surface of the chamber, and a robot arm configured to move in the first direction in the internal space of the chamber, a transfer chamber connected to the load lock of the substrate transfer module, a plurality of processing chambers connected to the transfer chamber, and a transfer arm inside the transfer chamber, and configured to unload the semiconductor substrate from the load lock and to load the semiconductor substrate into at least one of the plurality of processing chambers.

Provided is a transport robot and a substrate treating apparatus including the transport robot. The substrate treating apparatus includes a transport chamber having a long shape on one side, and for providing a moving space of a substrate, a load lock chamber connected to the transport chamber to provide an exchange space between the transport chamber and a substrate before a process or a substrate after a process, a process unit connected to the transport chamber to perform a process for a substrate transferred from the transport chamber, a track provided in the transport chamber to provide a moving path of a substrate, and a transport robot capable of moving along the track in a non-contact manner, and entering or exiting the load lock chamber to perform a substrate exchange between the load lock chamber and the transport chamber.

A method of patterning a substrate. The method may include providing a cavity in a layer, disposed on the substrate, the cavity having a first length along a first direction and a first width along a second direction, perpendicular to the first direction, and wherein the layer has a first height along a third direction, perpendicular to the first direction and the second direction. The method may include depositing a sacrificial layer over the cavity in a first deposition procedure; and directing angled ions to the cavity in a first exposure, wherein the cavity is etched, and wherein after the first exposure, the cavity has a second length along the first direction, greater than the first length, and wherein the cavity has a second width along the second direction, no greater than the first width.

Embodiments of the present disclosure provide a heated support pedestal including a body comprising a ceramic material, a support arm extending radially outward from a periphery of the body that is coupled to a shaft, and a vacuum conduit disposed within the shaft and through the body to connect with a surface of the body.

A cassette with embedded temperature sensors that is disposed within a load lock is disclosed. The temperature sensors may be disposed in a plurality of shelves of the load lock cassette to monitor the temperature of each of a plurality of workpieces disposed in the load lock. The output of these temperature sensors may be provided to a controller, which controls when the load lock is opened. The load lock cassette may also include cooling channels to accelerate the cooling of the workpieces to improve throughput. The cooling may be controlled using closed loop control, where a controller monitors the temperature of the workpieces during the cooling operation.

In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.