A system includes a plurality of inlets configured to dispense a gas into an enclosure of a substrate processing system. The enclosure is separate from processing chambers of the substrate processing system that process a semiconductor substrate. The system includes a controller configured to move into the enclosure a robot arm used to transport the semiconductor substrate between the processing chambers of the substrate processing system. The controller is configured to dispense the gas into the enclosure through one or more of the inlets in response to the robot arm being moved into the enclosure of the substrate processing system.

In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

A substrate processing device includes a transfer chamber configured to transfer a substrate under an atmospheric atmosphere and a plurality of processing units each including at least one processing chamber for processing the substrate under a vacuum atmosphere and at least one load-lock chamber connected to the processing chamber to switch an inner atmosphere thereof between the atmospheric atmosphere and the vacuum atmosphere. The transfer chamber includes a connection unit configured to connect the transfer chamber and the load-lock chamber such that each of the processing units is detachably attached. The connection unit includes an opening that allows the transfer chamber to communicate with the load-lock chamber, and an opening/closing mechanism configured to open and close the opening portion.

A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.

An atmosphere-to-vacuum (ATV) transfer module for a substrate processing tool includes a first side configured to interface with at least one loading station, a transfer robot assembly arranged within the ATV transfer module, and a second side opposite the first side. The transfer robot assembly is configured to transfer substrates between the at least one loading station and at least one load lock arranged between the ATV transfer module and a vacuum transfer module (VTM). The second side is configured to interface with the at least one load lock. The transfer robot assembly is arranged adjacent to the second side, and the at least one load lock extends through the second side into an interior volume of the ATV transfer module.

A substrate processing system includes a first chamber, a second chamber, and a cooling passage. The first chamber has therein a space for processing a substrate transferred from a first transfer chamber maintained in a vacuum atmosphere. The second chamber is disposed below the first chamber to be vertically aligned with the first chamber and configured to communicate with the first transfer chamber and a second transfer chamber maintained in an atmospheric atmosphere. The second chamber has substantially the same footprint as a footprint of the first chamber. Further, a cooling passage is disposed between the first chamber and the second chamber and configured to allow a coolant to flow therethrough.

A method for cleaning a load lock in a substrate processing system includes, in a first period, opening a first valve in fluid communication with a gas source to supply gas through a first vent into a gas volume of the load lock. The gas is supplied at a pressure and flow rate sufficient to disturb particles from surfaces of the load lock. The method includes, in a second period subsequent to the first period and with the first valve opened, opening a second valve in fluid communication with a pump and turning on the pump to flush the gas and particles from the gas volume of the load lock, and, in a third period subsequent to the second period, closing the first valve while continuing to pump the gas and the particles from the gas volume of the load lock via the second valve.

A transfer apparatus including a frame, multiple arms connected to the frame, each arm having an end effector and an independent drive axis for extension and retraction of the respective arm with respect to other ones of the multiple arms, a linear rail defining a degree of freedom for the independent drive axis for extension and retraction of at least one arm, and a common drive axis shared by each arm and configured to pivot the multiple arms about a common pivot axis, wherein at least one of the multiple arms having another drive axis defining an independent degree of freedom with respect to other ones of the multiple arms.