To provide a highly productive, compact, and inexpensive film deposition apparatus while ensuring the stability of the film deposition quality, the apparatus includes a rotating body configured to be rotatable and provided with a holding unit that holds an object to be transferred in an attachable and detachable manner, the holding unit being provided along an outer peripheral portion of the rotating body; and a transfer mechanism having a gripping mechanism capable of gripping and releasing the object, the transfer mechanism transferring the object held by a predetermined device to the holding unit of the rotating body and transferring another object held by the rotating body to the predetermined device.

An integrated metrology system for evaluating semiconductor wafers, the metrology system comprises a main body that has a rear side and a front side; the front side defines a front border of the main body; one or more detachable supporting units that are detachably coupled to the main body and support the main body while extending outside the front border; and at least one auxiliary supporting unit that is configured to support the main body at an absence of the one or more detachable supporting units

A substrate treatment line is disclosed. The substrate treatment line may include a chamber portion including a plurality of treatment chambers stacked in a vertical direction, and a vertical return robot, including a plurality of gripping portions, to transfer a plurality of substrates in a vertical direction simultaneously and load or unload the substrates to the treatment chambers.

Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

The present disclosure discloses a semiconductor processing apparatus, which is configured to perform processing on a wafer. The disclosed semiconductor processing apparatus includes a vacuum interlock chamber, a plurality of apparatus bodies, the apparatus body including a transfer platform, and at least two reaction chambers being arranged along a circumferential direction of the transfer platform, and a temporary storage channel, any two neighboring apparatus bodies being communicated through the temporary storage channel, and the temporary storage channel being configured to temporarily store the wafer. One of the plurality apparatus bodies is connected to the vacuum interlock chamber. The transfer platform is configured to transfer the wafer between the vacuum interlock chamber and the reaction chamber, between the temporary storage channel and the vacuum interlock chamber, and between the temporary storage channel and the reaction chamber. With the above solution, the problem that the productivity of the semiconductor processing apparatus is low is solved.

A process of smoothing a top surface of a bit line metal of a memory structure to decrease resistance of a bit line stack. The process includes depositing titanium layer of approximately 30 angstroms to 50 angstroms on polysilicon layer on a substrate, depositing first titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on titanium layer, annealing substrate at a temperature of approximately 700 degrees Celsius to approximately 850 degrees Celsius, depositing second titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on first titanium nitride layer after annealing, depositing a bit line metal layer of ruthenium on second titanium nitride layer, annealing bit line metal layer at temperature of approximately 550 degrees Celsius to approximately 650 degrees Celsius, and soaking bit line metal layer in hydrogen-based ambient for approximately 3 minutes to approximately 6 minutes during annealing.

A bonding apparatus configured to bond substrates includes a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a rotator configured to rotate the first holder and the second holder relatively; a moving device configured to move the first holder and the second holder relatively in a horizontal direction; three position measurement devices disposed at the first holder or the second holder rotated by the rotator and configured to measure a position of the first holder or the second holder; and a controller configured to control the rotator and the moving device based on measurement results of the three position measurement devices.

An integrated circuit (IC) fabrication tool and associated method for facilitating inline contactless sheet resistance measurement. In one arrangement, the tool comprises at least one main chamber, one or more processing chambers detachably coupled to the main chamber, each of the one or more processing chambers configured for effectuating a respective processing operation on a semiconductor wafer, and at least one sensor chamber detachably coupled to the at least one main chamber, the at least one sensor chamber having a contactless sensor assembly for sensing sheet resistance of a process layer of the semiconductor wafer based on eddy currents generated in the process layer.

A photoexcitable material includes: a solid solution of MN (where M is at least one of gallium, aluminum and indium) and ZnO, wherein the photoexcitable material includes 30 to 70 mol % ZnO and has a band gap energy of 2.20 eV or less.