The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including: a process chamber having an inner space; a substrate support on which a substrate is seated on a top surface thereof; an inner lid part which is installed to be vertically movable in the inner space and of which a portion is in close contact with the bottom surface of the process chamber to define a sealed processing space in which the substrate support is disposed; a gas supply part configured to supply a process gas to the processing space; and an inner lid driving part configured to drive the vertical movement of the inner lid part.

A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

A preheat ring (126) for use in a chemical vapor deposition system includes a first portion and a second portion selectively coupled to the first portion such that the first and second portions combine to form an opening configured to receive a susceptor therein. Each of the first and second portions is independently moveable with respect to each other.

An electrostatic chuck device comprising a mounting table having a mounting surface, a focus ring; and a cooling element, wherein the mounting table has a holding portion surrounding the mounting surface, the holding portion has an annular groove portion having a through-hole, the holding portion has inner and outer peripheral surfaces which hold the focus ring and are located on both sides of the groove portion, the holding surface satisfies conditions (i) and (ii), (i) a straight line connecting a first point corresponding to an innermost periphery of the holding surface and a second point corresponding to an outermost periphery of the holding surface has a positive or a negative inclination from the innermost periphery toward the outermost periphery, wherein a difference between a height of the first point and a height of the second point is 0 μm to 10 μm, and (ii) leak areas of the inner peripheral surface and the outer peripheral surface are less than 0.7 mm.sup.2.

A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; an electric heater provided at the rotary table and configured to heat the substrate; a power receiving electrode provided at the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode to supply a power to the electric heater via the power receiving electrode; an electrode moving device configured to connect and disconnect the power feeding electrode and the power receiving electrode relatively; a power feeder configured to supply the power to the power feeding electrode; a processing cup disposed to surround the rotary table; at least one processing liquid nozzle configured to supply a processing liquid onto the substrate; a processing liquid supply device configured to supply the processing liquid to the processing liquid nozzle; and a controller.

A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.

A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

A substrate processing apparatus including an electrostatic chuck on which a substrate is mountable; a ring surrounding the electrostatic chuck, the ring including a first coupling groove; and a first floating electrode in the first coupling groove of the ring, the first floating electrode having a ring shape, wherein a top surface of the first floating electrode is exposed at the ring, and the first floating electrode has a tapered shape including an inclined surface that is inclined in a downward direction toward the electrostatic chuck.

A pedestal assembly for a processing region and comprising first pins coupled to a substrate support, configured to mate with first terminals of an electrostatic chuck, and are configured to be coupled to a first power source. Each of the first pins comprises an interface element, and a compliance element supporting the interface element. Second pins are coupled to the substrate support, configured to mate with second terminals of the electrostatic chuck, and configured to couple to a second power source. Alignment elements are coupled to the substrate support and are configured to interface with centering elements of the electrostatic chuck. The flexible element is coupled to the substrate support, configured to interface with a passageway of the electrostatic chuck, and configured to be coupled to a gas source.

A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.