Patent classifications
H01L21/68742
CONVEYING DEVICE, CONVEYING METHOD AND EVAPORATION APPARATUS
A conveying device, a conveying method, and an evaporation apparatus are provided. The conveying device comprises a carrying mechanism for carrying a substrate; and a fastening mechanism for fastening the substrate on the carrying mechanism in a mechanical manner. In the conveying device, the substrate is fastened on the carrying mechanism in a mechanical manner by the fastening mechanism. As compared with electrostatic fastening and adhesive fastening, this reduces damage to the substrate, increases the reliability for fastening the substrate, and makes it easy to receive and detach the substrate. (FIG. 1)
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND RECORDING MEDIUM
A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.
Direct lift cathode for lithography mask chamber
Exemplary lithography mask processing chambers may include a substrate support that includes a plurality of lift pins that are vertically translatable relative to a top surface of the substrate support. The lithography mask processing chambers may include a cover ring positioned atop the substrate support. The cover ring may define a rectilinear substrate seat. A top surface of the rectilinear substrate seat may be elevated above the top surface of the substrate support. An outer periphery of the rectilinear substrate seat may be positioned outward of the plurality of lift pins.
Substrate transport apparatus, substrate processing apparatus, and substrate transport method
A substrate transport apparatus includes transport hands that clamp substrates by vacuum pressures, respectively, and that are located at different heights, a vacuum pressure supply unit that supplies the vacuum pressures to the transport hands, and a controller that controls the vacuum pressure supply unit to supply the vacuum pressures to the transport hands or interrupt the supply of the vacuum pressures to the transport hands. The controller controls the vacuum pressure supply unit such that the vacuum pressures of the transport hands are turned off at the same height from a substrate support member.
METHOD OF FORMING AN ELECTRONIC STRUCTURE USING REFORMING GAS, SYSTEM FOR PERFORMING THE METHOD, AND STRUCTURE FORMED USING THE METHOD
Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.
METHODS AND APPARATUS FOR ADJUSTING SURFACE TOPOGRAPHY OF A SUBSTRATE SUPPORT APPARATUS
Systems, method and related apparatuses for adjusting support elements of a support apparatus to approximate a surface profile of a wafer. The support apparatus may include a group of mutually lateral adjacent support elements, each mutually lateral adjacent support element is configured to independently move at least vertically and comprising an upper surface. The support apparatus may further include a thermal energy transfer device operably coupled to each of the mutually lateral support elements, and an actuator system operably coupled to each of the support elements to selectively move one or more of the mutually lateral support elements vertically.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The present disclosure is a substrate processing apparatus including: a chamber configured to accommodate a substrate; a heat source configured to heat-treat the substrate; a heat ray sensor provided outside the chamber and configured to receive infrared rays radiated from the substrate; and an infrared ray transmission window provided in the chamber and configured to transmit an infrared ray having a wavelength greater than or equal to 8 μm to the heat ray sensor.
PURGING SPINDLE ARMS TO PREVENT DEPOSITION AND WAFER SLIDING
A system includes a plurality of spindle arms located above a plurality of stations in a processing chamber to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises first gas lines arranged below the stations to supply a purge gas. The system comprises second gas lines extending upwards from the first gas lines to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM THEREFOR
Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.
Wafer inspection system
A wafer inspection system is provided. The wafer inspection system comprises: a transfer region in which a transfer device is arranged; an inspection region in which test heads for inspecting a substrate are arranged; and a maintenance region in which the test heads are maintained. The inspection region is located between the transfer region and the maintenance region, a plurality of inspection rooms accommodating the test heads are adjacent to each other in the inspection region, and the test heads are configured to be unloaded from the inspection region to the maintenance region.