Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

Embodiments of the present disclosure generally relate to an apparatus for improving the film thickness on a substrate when using a heated substrate support. A cover plate to be placed over the top surface of a heated substrate support is disclosed. The cover plate includes a pocket formed in the middle thereof for the placement of a substrate. The cover plate may include a variety of features including a plurality of dimples, a plurality of radially disposed grooves, a plurality of annular grooves, lift pin holes, pin slots, and gas exhaust holes.

An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.

A heat treatment device includes: a heating plate configured to support and heat a substrate on which a resist film is formed; a chamber configured to cover a processing space above the heating plate; a gas supply configured to supply a gas into the chamber along a gas flow path connected to an inside of the chamber, the gas flow path beginning from an outer periphery of the heating plate and extending along an upper surface of the heating toward an end portion on an outer periphery of the substrate; and an exhaust port configured to evacuate inside of the chamber through exhaust holes that are formed above the processing space and open downwards.

Cryogenic testing systems for testing electronic components such as wafers under cryogenic conditions are provided. The novel designs enable fast throughput by use of a cryogenically maintained test surface to which wafers may be rapidly introduced, cooled, and manipulated to contact testing elements while maintaining high quality cryogenic conditions. Thermal shielding is achieved by floating shields and/or flexible bellows that provide effective thermal shielding of the test environment while enabling manipulation of wafers with a wide range of motion. Also provided are novel door assemblies, chuck configurations, and vacuum plate bases that enable effective maintenance of cryogenic conditions and high throughput.

An upper holding device holds a substrate in a horizontal attitude without rotating the substrate. A lower holding device rotates a substrate while holding the substrate by suction. A substrate held by the upper holding device is cleaned with use of a cleaning liquid, and a substrate held by the lower holding device is cleaned with use of a cleaning liquid. Gas in a processing space is exhausted by exhaust equipment of a factory through an exhaust system. When a substrate is held by the upper holding device, gas in the processing space is not exhausted or gas in the processing space is exhausted at a first flow rate. Gas in the processing space is exhausted at a second or third flow rate that is higher than the first flow rate when the substrate is held by the lower holding device.

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Embodiments of the present disclosure provide a heated support pedestal including a body comprising a ceramic material, a support arm extending radially outward from a periphery of the body that is coupled to a shaft, and a vacuum conduit disposed within the shaft and through the body to connect with a surface of the body.

An ejector pin structure at least includes an end part and an ejector rod. The end part includes a convex structure and an inverted trapezoid-like structure located below the convex structure. The convex structure is configured to support an object to be processed. A projection area of the convex structure in a horizontal plane is less than a projection area of the inverted trapezoid-like structure in the horizontal plane.