Apparatuses and methods are described. An apparatus may include a processing chamber including chamber walls, a chamber heater configured to heat the walls, a pedestal positioned within the chamber and including a substrate heater having a plurality of light emitting diodes (LEDs) configured to emit light with wavelengths in the range of 400 nanometers (nm) and 800 nm, a window positioned above the heater and having a material transparent to light with wavelengths in the range of 400 nm and 800 nm, and three or more substrate supports, each having a substrate support surface vertically offset from the window and configured to support a substrate such that the window and the substrate are offset by a nonzero distance.

A substrate holding board includes a first layer and a second layer forming an interfacial surface with the first layer. The first layer and the second layer contain diamond-like carbon. A refractive index of the first layer in a wavelength is higher than a refractive index of the second layer in the wavelength. A distance from the second layer to a topmost surface of the substrate holding board is smaller than a thickness of the first layer.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing for providing a treating space for treating a substrate within; a support unit for supporting the substrate in the treating space; a bottom supply port for supplying a process fluid to the treating space; and a filler member positioned below the substrate supported on the support unit in the treating space, and wherein the filler member forms a buffer space facing the bottom supply port, and a passage is formed between the filler member and an inner wall of the housing and flows the process fluid which is introduced to the buffer space in a direction of the substrate.

Provided is an apparatus for treating a substrate, the apparatus including: a liquid treating chamber for liquid-treating a substrate by supplying a treatment liquid to the substrate; and a liquid supply unit for supplying the treatment liquid to the liquid treating chamber, in which the liquid supply unit includes: a cabinet configured to be mounted with a bottle containing the treatment liquid; and a rotation generating part configured to rotate the bottle so that a direction in which an inlet of the bottle mounted on the cabinet faces is changed.

A front surface of a semiconductor wafer is rapidly heated by irradiation of a flash of light. Temperature of the front surface of the semiconductor wafer is measured at predetermined intervals after the irradiation of the flash of light, and is sequentially accumulated to acquire a temperature profile. From the temperature profile, an average value and a standard deviation are each calculated as a characteristic value. It is determined that the semiconductor wafer is cracked when an average value of the temperature profile deviates from the range of ±5σ from a total average of temperature profiles of a plurality of semiconductor wafers or when a standard deviation of the temperature profile deviates from the range of 5σ from the total average thereof of the plurality of semiconductor wafers.

Methods and arrangement for clamping substrates to a support using adhesive material area disclosed. The method comprises providing a support comprising a first surface defining a plane; applying adhesive material on at least portions of the first surface; and placing the substrate onto the adhesive material, wherein the adhesive material forms a plurality of support locations supporting the substrate. Preferably the adhesive material is cured at least partly during the application of a substantially uniformly distributed force to the substrate in the direction of the support. The arrangements comprise a support comprising a first surface, for supporting the substrate via adhesive material, whereby the first surface defines a plane. Preferably it also comprises an arrangement for providing electromagnetic radiation, thermal energy, and/or a chemical substance to the adhesive material, and an arrangement for providing a substantially uniformly distributed force to the substrate in the direction of the support.

An electrostatic chuck heater includes a ceramic plate, an electrostatic electrode, first and second zone heater electrodes, and first and second zone gas grooves. The ceramic plate includes, on its surface, a wafer placement surface. The electrostatic electrode is embedded in the ceramic plate. The first and second zone heater electrodes are embedded in the ceramic plate, corresponding to respective multiple heater zones into which the wafer placement surface is divided, and allow electric power to be individually supplied to the heater zones. Zone gas grooves are provided corresponding to respective multiple gas supply zones into which the wafer placement surface is divided independently of the heater zones, and allow a gas to be individually supplied to the gas supply zones.

A substrate with a backside surface configured to provide a friction switch when the substrate is loaded onto a substrate holder in a substrate-loading cycle, wherein the substrate backside surface has a molecular assembly including at least one high-interaction region and at least one low-interaction region. Further, there is provided methods using such a substrate and methods for creating such a substrate.

A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.