Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic top plate having a top surface with a processing region. One or more electrodes is within the ceramic top plate. A plurality of mesas is within the processing region and on the top surface of the ceramic plate or vertically over an edge of one of the one or more electrodes.

A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

A substrate holding board includes a first layer and a second layer forming an interfacial surface with the first layer. The first layer and the second layer contain diamond-like carbon. A refractive index of the first layer in a wavelength is higher than a refractive index of the second layer in the wavelength. A distance from the second layer to a topmost surface of the substrate holding board is smaller than a thickness of the first layer.

A substrate support unit includes: a ceramic body having a surface for supporting a substrate, the ceramic body including aluminum nitride (AlN), a heat generating resistor disposed in the ceramic body, and including molybdenum (Mo), and a coating layer surrounding the heat generating resistor, and including molybdenum aluminum nitride (MoAlN).

Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.

An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

In various examples, the disclosed subject matter includes a substrate pedestal that includes a platen formed from a ceramic material and having an upper surface to support a substrate during processing. A stem, formed from a ceramic material, has an upper-stem flange upon which the platen is mechanically coupled. The stem has an interior portion. A backside gas-delivery tube, formed from a ceramic material, is located in the interior portion of the stem. The backside gas-delivery tube includes an upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange. The backside gas-delivery tube is in fluid communication with at least one backside-gas passage of the platen and is arranged to supply a backside gas to a region below a lower surface of the substrate during processing. Other examples of apparatuses and methods of making and using the apparatuses are included.

A wafer holding table includes a ceramic electrostatic chuck, a metal cooling plate, a resin layer having predetermined thermal resistance, and a stress relaxation layer having lower Young's modulus than the resin layer. The resin layer and the stress relaxation layer are disposed between the electrostatic chuck and the cooling plate. The resin layer is disposed closer to the electrostatic chuck, and the stress relaxation layer is disposed closer to the cooling plate. The resin layer has a multilayer structure including a plurality of resin sheets laminated one on another. The resin layer is thinner than a comparative sample with a single-layer structure made of a material identical to a material of the resin sheet and having thermal resistance identical to thermal resistance of the resin layer.

A technology for securing favorable appearance of a SiC member, the SiC member includes: a first SiC layer having a first upper surface having a concavo-convex shape and a first lower surface; and a second SiC layer having a second upper surface and a second lower surface, the second lower surface being in contact with the first upper surface and having a concavo-convex shape corresponding to that of the first upper surface. The second SiC layer has a recess concaved from the second upper surface toward the second lower surface side and a flat bottom surface, and the bottom surface of the recess is placed upward of the second lower surface.

Some embodiments include a high voltage pulsing power supply. A high voltage pulsing power supply may include: a high voltage pulser having an output that provides pulses with an amplitude greater than about 1 kV, a pulse width greater than about 1 μs, and a pulse repetition frequency greater than about 20 kHz; a plasma chamber; and an electrode disposed within the plasma chamber that is electrically coupled with the output of the high voltage pulser to produce a pulsing an electric field within the chamber.