A wafer placement table includes an alumina base that has a wafer placement surface on its upper surface, and incorporates an electrode; a brittle cooling base bonded to a lower surface of the alumina base; and a ductile connection member stored in a storage hole, opened in a lower surface of the cooling base, in a state of restricted axial rotation and in a state of engaging with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section.

A ceramic structure includes a base body, and a thermoelectric device having a part in directly contact with the base body. The base body is a ceramic consisting of aluminum oxide. The thermoelectric device comprises a conductor part that is a sintered body having an alloy of tungsten and rhenium, as a main component, and including nickel oxide, aluminum oxide and silicon dioxide.

A wafer placement table includes a central ceramic base that has an upper surface including a wafer placement surface, an outer circumferential ceramic base that has an upper surface including a focus ring placement surface, and a cooling base that includes a central portion, an outer circumferential portion, and a coupler that couples the central portion and the outer circumferential portion with each other. The cooling base has a central refrigerant flow path that is formed in the central portion and an outer circumferential refrigerant flow path that is formed in the outer circumferential portion. The coupler has an upward groove that open from an upper surface and that have an annular shape, and a downward groove that opens from a lower surface, that have a ceiling surface higher than a bottom surface of the upward groove, and that have an annular shape.

A support member for a thermal processing chamber is described. The support member has a sol coating on at least one surface. The sol coating contains a material that blocks a desired wavelength or spectrum of radiation from being transmitted by the material of the support member. The sol coating may be a multi-layer structure that may include adhesion layers, transition layers, and cap layers, in addition to radiation-blocking layers.

An electrostatic chuck includes a base plate, a ceramic plate fixed to the base plate and including an electrode embedded in the ceramic plate, and a resin layer bonding the base plate and the ceramic plate and including one or more adhesives. In at least one of the one or more adhesives, a temperature corresponding to an extreme value of a loss tangent in a temperature range of −150° C. to 250° C. is −70° C. or lower.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base having a refrigerant flow channel, and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a distance from a ceiling surface of the refrigerant flow channel to the wafer placement surface at a most downstream part of the refrigerant flow channel is shorter than the distance at a most upstream part of the refrigerant flow channel.

Semiconductor chamber components are described herein that includes one or more conduits for carrying a fluid between powered and grounded portions of the chamber component, the conduit configure to be less prone to arcing as compared to conventional components. In one example, a semiconductor chamber component is provided that includes a powered region, a grounded region, and a fluid conduit. The fluid conduit is disposed within the semiconductor chamber component and passes through the powered and grounded regions. The fluid conduit has an end to end electrical resistance of between 0.1 to 100 MΩ.

A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.

A member for semiconductor manufacturing apparatus includes: a ceramic plate; a metal joining layer and a cooling plate (conductive substrate) provided at a lower surface of the ceramic plate; a first hole penetrating the ceramic plate in an up-down direction; and a through-hole and a gas hole (second hole) penetrating the conductive substrate in an up-down direction, and communicating with the first hole. A dense insulating case has a bottomed hole 64 opened in a lower surface, and is disposed in the first hole and the second hole. A plurality of microholes penetrates a bottom of the bottomed hole in an up-down direction. A porous plug is disposed in the bottomed hole and in contact with the bottom.

An aluminum nitride-based sintered compact includes: aluminum nitride crystal particles containing Mg; composite oxide containing a rare earth element and Al, the composite oxide having a garnet crystal structure; and composite oxynitride containing Mg and Al. Particles of the composite oxide and particles of the composite oxynitride are interspersed between the aluminum nitride crystal particles. The composite oxide may include Y. A content of Mg in the aluminum nitride crystal particles may fall in a range of 0.1 mol % or more and 1.0 mol % or less, based on a total of all metal elements contained in the aluminum nitride crystal particles taken as 100 mol %. A semiconductor holding device includes the aluminum nitride-based sintered compact; and an electrostatic adsorptive electrode.