A method of manufacturing a wafer mounting table according to an embodiment includes: (a) a step of loading a ceramic slurry containing a ceramic powder and a gelling agent into opening portions of a metal mesh, inducing a chemical reaction of the gelling agent to gelate the ceramic slurry, and then performing degreasing and calcining to prepare a ceramic-loaded mesh; (b) a step of sandwiching the ceramic-loaded mesh between a first ceramic calcined body and a second ceramic calcined body obtained by calcining after mold cast forming so as to prepare a multilayer body; and (c) a step of hot press firing the multilayer body to prepare the wafer-receiving table.

A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein, a cooling substrate made of a metal-ceramic composite and having a cooling medium passage therein, and a metal joining layer configured to join a lower surface of the ceramic substrate to an upper surface of the cooling substrate. A thickness of a lower part of the cooling substrate below the cooling medium passage is greater than or equal to 13 mm, or greater than or equal to 43% of an overall thickness of the cooling substrate.

A method includes providing a first plate including a first surface, a second surface opposite to the first surface, and a first recess indented from the first surface towards the second surface; providing a semiconductor structure including a third surface, a fourth surface opposite to the third surface, and a first sidewall extending between the third surface and the fourth surface; placing the semiconductor structure over the first plate; and disposing a priming material over the third surface of the semiconductor structure, wherein a peripheral portion of the fourth surface of the semiconductor structure is in contact with the first surface of the first plate upon the disposing of the priming material.

Disclosed herein are embodiments of an electrostatic end effector, and methods of manufacturing the same. In one embodiment, an electrostatic end effector comprises a ceramic base, a first electrode layer coupled to the ceramic base, and a second electrode layer coupled to the ceramic base. The electrostatic end effector is configured to generate an electrostatic force upon a substrate responsive to a voltage applied to the first electrode. The electrostatic force upon the substrate may increase the friction force upon the substrate which may allow the end effector to accelerate at faster rates than current technologies allow without the substrate slipping on the end effector.

A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.

The present disclosure relates to a spin head, apparatus and method for treating a substrate including the spin head. The spin head includes a supporting plate where a substrate is placed and a chuck pin placed on the supporting plate and supporting a lateral portion of the substrate, wherein the chuck pin includes an outer body and an inner body inserted in the outer body and provided with a different material from the outer body, wherein each outer body and the inner body is provided with any one of a first material or a second material, and wherein one material of the first material and the second material is provided with a material having lower heat conductivity and better thermal resistance than another one.

A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

A method comprises depositing a mask layer on a front-side surface of a wafer, wherein a portion of the wafer has a first resistivity; with the mask layer in place, performing an ion implantation process on a backside surface of the wafer to implant a resistivity reduction impurity into the wafer through the backside surface of the wafer to lower the first resistivity of the portion of the wafer to a second resistivity; after performing the ion implantation process, removing the mask layer from the front-side surface of the wafer; and forming semiconductor devices on the front-side surface of the wafer.

It is an object of the present invention to provide a high-flatness substrate holding table. According to a first aspect, a substrate processing apparatus is provided, and such a substrate processing apparatus includes a table for holding a substrate, a resin film attached to a top surface of the table and a heater provided inside the table, and the top surface of the table is formed of ceramics, the top surface of the table includes an opening connectable to a vacuum source, the resin film is formed of polyimide, and a through hole is formed at a position corresponding to the opening of the table when attached to the top surface of the table.

The present disclosure relates to a support ring for a thermal processing chamber. The support ring has a polysilicon coating. The polysilicon coating is formed using a plasma spray deposition process.