Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

Methods, systems, and apparatus for a substrate transfer method, including positioning a tray handler device in a first position with i) cutouts of an aperture of the first tray in superimposition with respective pedestals of a pedestal platform and ii) a distal end of the pedestals extending away from a top surface of the first tray; increasing a distance between the top surface of the first tray and a top surface of the pedestal platform to transfer a first substrate from the pedestals to the tabs defined by the aperture of the first tray, while concurrently engaging the second tray handler with the second tray; and increasing a distance between the top surface of the second tray and the bottom surface of a chuck to transfer a second substrate from the chuck to the tabs defined by the second tray.

Provided is a susceptor which enables improvement in yield of semiconductor chips produced from wafers, has a long life, and hardly causes chipping. The susceptor includes pockets (2) in which wafers (10) are to be placed, wherein at least one of the pockets (2) includes a plurality of supporting portions (3) for supporting the wafer (10), a plurality of contact portions (4) to make contact with a lateral surface (10a) of the wafer (10), and a plurality of non-contact portions (5) spaced from the lateral surface (10a) of the wafer (10). The contact portions (4) and the non-contact portions (5) are alternately provided in the inner peripheral wall of the pocket (2), and at least two of the supporting portions (3) are provided on lines extending from a center (O) of the pocket (2) to the non-contact portions (5) when the susceptor is viewed from above.

Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink is measured. The parameter is compared to a baseline range.

Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.

Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O.sub.2, N.sub.2O, or O.sub.3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted. Therefore, the ligand and the source gas of which the ligand has been decomposed may not react with the reactant gas or heat which occurs in the exhaust pump, and thus, the ligand-decomposed source gas and the ligand flowing into the exhaust pump are not deposited on an inner surface of the exhaust pump. Also, the ligand-decomposed source gas and ligands piled in the exhaust pump are not exploded.

There is provided a film forming method of embedding a film in a groove formed in a front surface of a substrate, which includes: depositing an in-conformal film in the groove formed in the front surface of the substrate while forming a V-like cross-sectional shape in the groove; and embedding a conformal film in the groove by depositing the conformal film.

A susceptor arrangement for use in a CVD reactor includes a circular or annular susceptor with a first susceptor broad side, on which a substrate holder and at least one coveting element are arranged. At least one of the covering elements consists of multiple covering plates, in which a lowermost covering plate is adjacent to the first broad side face of the susceptor, and an uppermost covering plate covers the lowermost covering plate at least in certain regions and forms a free broad side face of the susceptor arrangement. The covering plates are preferably produced from silicon carbide, and are connected to one another by positioning elements.

The present disclosure relates to an apparatus for processing substrate including a supporting unit for supporting a substrate, a lid disposed apart from the supporting unit in an upward direction, a first gas injection unit coupled to the lid to inject a first gas into a first region, a second gas injection unit coupled to the lid to inject a second gas into a second region, a purge gas unit coupled to the lid to inject a purge gas into a third region disposed between the first region and the second region, and a rotation unit for rotating the supporting unit.

Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and gas outlets. A number of gas outlets may be greater than a number of gas inlets. The systems may include a plurality of valve blocks that are interfaced with the gas splitter. Each valve block may define a number of gas lumens. An inlet of each of the gas lumens may be in fluid communication with one of the gas outlets. An interface between the gas splitter and each of the valve blocks may include a choke. The systems may include a plurality of output manifolds seated on the lid plate. The systems may include a plurality of output weldments that may couple an outlet of one of the gas lumens with one of the output manifolds.