Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

A substrate processing apparatus may include a first disk provided in a chamber and configured to perform a turning motion and to include a plurality of seating holes periodically arranged within a specific radius from a center axis, a plurality of second disks provided in the seating holes, respectively, and configured to perform a revolving and rotating motion in accordance with the turning motion of the first disk, a first rotary connector structure provided between the second disk and the seating hole to allow for a rotating motion of and for an electric connection to the second disk, an electrostatic chuck provided on the second disk and configured to hold a substrate using an electric power supplied through the first rotary connector structure, and a first magnetic gear fixed to the second disk and configured to exert a torque on the second disk, and a second magnetic gear.

The present invention relates to a substrate supporting device and a substrate processing apparatus. The substrate supporting device, the substrate supporting device of the substrate processing apparatus, may include: a disk; and a plurality of substrate supporting parts disposed radially from a center of the disk, a substrate being supported by each of the plurality of substrate supporting parts. An upper surface of each of the plurality of substrate supporting parts may protrude more upward than an upper surface of the disk.

A coating apparatus includes a process chamber, a rotation device, and a rotation holder. The rotation device is disposed in the process chamber. The rotation holder is connected to the rotation device. The rotation holder includes two extension elements, two retaining elements, and two pins. The two extension elements are disposed around a center axis and separated from each other, wherein each of the two extension elements has a side surface. Each of the two retaining elements has a bottom surface, one of the two retaining elements is connected to one of the side surfaces, and the other of the two retaining elements is connected to the other of the side surfaces. One of the two pins is connected to one of the bottom surfaces, and the other of the two pins is connected to the other of the bottom surfaces.

Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.

A substrate processing system includes a substrate loading unit which loads a plurality of substrates, a substrate transfer unit which transfers N (where N is natural number) substrates at the same time from the substrate loading unit, and a substrate processing unit including a plurality of process chambers which receives the N substrates at the same time from the substrate transfer unit and processes the received substrates where each of the process chambers includes a stage on which the N substrates are disposed and an insulation layer disposed between the N substrates.

An atomic layer deposition (ALD) apparatus includes a light source disposed at an upper portion of a section, a wafer supporting part disposed at a lower portion of the section, and a lens pocket between the light source and the wafer supporting part, and including a frame part and a transparent panel, the lens pocket including a pocket space having sides defined by the frame part and a bottom defined by the transparent panel.

Exemplary substrate processing systems may include a transfer region housing defining a transfer region, and including substrate supports and a transfer apparatus. The transfer apparatus may include a central hub having a housing, and including a first shaft and a second shaft. The housing may be coupled with the second shaft, and may define an internal housing volume. The transfer apparatus may include a plurality of arms equal to a number of substrate supports of the plurality of substrate supports. Each arm of the plurality of arms may be coupled about an exterior of the housing. The transfer apparatus may include a plurality of arm hubs disposed within the internal housing volume. Each arm hub of the plurality of arm hubs may be coupled with an arm of the plurality of arms through the housing. The arm hubs may be coupled with the first shaft of the central hub.