An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.

There is provided a magnetic drive apparatus having a magnetic drive mechanism driven by a magnet. The magnetic drive apparatus includes a magnetizing yoke disposed in the magnetic drive apparatus at a standby position and configured to be moved to magnetize the magnet and a magnetizing yoke holder configured to hold the magnetizing yoke at a magnetizing position for magnetizing the magnet when the magnetic drive mechanism is stopped.

A substrate processing apparatus of an embodiment includes a nozzle plate and a support configured to support a substrate at a predetermined distance from the nozzle plate with a first surface of the substrate facing the nozzle plate. A processing liquid supply unit is configured to supply a processing liquid to a second surface of the substrate that is opposite to the first surface. A first supply unit is configured to supply a first fluid from a first supply port in the nozzle plate. A second supply unit is configured to supply a second fluid from a second supply port closer to a outer edge of the nozzle plate than the first supply port.

Cryogenic testing systems for testing electronic components such as wafers under cryogenic conditions are provided. The novel designs enable fast throughput by use of a cryogenically maintained test surface to which wafers may be rapidly introduced, cooled, and manipulated to contact testing elements while maintaining high quality cryogenic conditions. Thermal shielding is achieved by floating shields and/or flexible bellows that provide effective thermal shielding of the test environment while enabling manipulation of wafers with a wide range of motion. Also provided are novel door assemblies, chuck configurations, and vacuum plate bases that enable effective maintenance of cryogenic conditions and high throughput.

The present disclosure provides a heater and a heating base. The heater is used in a semiconductor process apparatus and includes a heating body and a base configured to support the heating body. The base includes a base body and a plate connected to each other. The base body is opposite to the heating body and arranged at an interval. The plate is arranged between the base body and the heating body and is fixedly connected to the heating body. An elastic bending structure is arranged on at least one of the plate, the base body, or the connection place between the plate and the base body. The elastic bending structure is configured to cause the plate and the heating body to remain connected by generating elastic deformation when the plate and the base body expand and deform.

An electrostatic chuck includes: a disk-shaped ceramic plate having a wafer placement surface on a surface thereof; an electrostatic electrode embedded in the ceramic plate; and gas grooves that are divided in a plurality of zones when the ceramic plate is seen from above and each of which is independently provided in the wafer placement surface so as to extend from one to the other of a pair of gas supply/discharge openings for a corresponding one of the zones. A pattern in which a gas is supplied to each of the gas grooves provided for a corresponding one of the zones is selectable between a first pattern in which the gas flows from one to the other of the pair of gas supply/discharge openings and a second pattern in which the gas flows from the other to the one of the pair of gas supply/discharge openings.

The present invention provides a substrate treating apparatus, including: a treatment container having a treatment space therein; a support unit for supporting and rotating the substrate in the treatment space; and a liquid supply unit for supplying a liquid onto the substrate, in which wherein the support unit includes: a body on which the substrate is seated; and a support shaft coupled to the body, and an upper surface of the body is provided with a central portion including a center of the body and an edge portion surrounding the central portion, and a vacuum hole is formed in the central portion, and a groove is formed in the edge portion.

A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.

Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.