There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.

The invention relates to a method for creating a detachment area (2) in a solid (1), in particular for detaching the solid (1) along the separating region (2). Said solid portion (12) that is to be detached is thinner than the solid body (1) from which the solid portion (12) has been removed. According to the invention, said method preferably comprises at least the following steps: the crystal lattice of the solid (1) is modified by means of a modifying agent, in particular by means of at least one laser, in particular a pico- or femtosecond laser. The modifications, in particular the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) which is to be detached, several modifications (9) are created in the crystal lattice, said crystal lattice penetrates, following said modifications (9), in the areas surrounding the modifications (9), at least in one particular part.

In a manufacturing method of a semiconductor element of the present disclosure, a first semiconductor part (SL1) includes a protruding portion (TS) protruding toward an underlying substrate (UK), the protruding portion contains a nitride semiconductor, the protruding portion and the underlying substrate are bonded to each other, a semiconductor substrate (HK) includes a hollow portion (TK) located between the underlying substrate and the first semiconductor part, the hollow portion is in contact with a side surface of the protruding portion and communicates with the outside of the semiconductor substrate, and the protruding portion (TS) is irradiated with the laser beam (LZ) before the first semiconductor part is separated from the semiconductor substrate.

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

A semiconductor substrate includes a single crystal Ga.sub.2O.sub.3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga.sub.2O.sub.3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga.sub.2O.sub.3-based substrate.

In one embodiment, a method of manufacturing a semiconductor device includes forming a first semiconductor layer including impurity atoms with a first density, on a first substrate, forming a second semiconductor layer including impurity atoms with a second density higher than the first density, on the first semiconductor layer, and forming a porous layer resulting from porosification of at least a portion of the second semiconductor layer. The method further includes forming a first film including a device, on the porous layer, providing a second substrate provided with a second film including a device, and bonding the first and second substrates to sandwich the first and second films. The method further includes separating the first and second substrates from each other such that a first portion of the porous layer remains on the first substrate and a second portion of the porous layer remains on the second substrate.

A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package.

A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.

Methods of fabricating a semiconductor structure include bonding a carrier wafer over a substrate, removing at least a portion of the substrate, transmitting laser radiation through the carrier wafer and weakening a bond between the substrate and the carrier wafer, and separating the carrier wafer from the substrate. Other methods include forming circuits over a substrate, forming trenches in the substrate to define unsingulated semiconductor dies, bonding a carrier substrate over the unsingulated semiconductor dies, transmitting laser radiation through the carrier substrate and weakening a bond between the unsingulated semiconductor dies and the carrier substrate, and separating the carrier substrate from the unsingulated semiconductor dies. Some methods include thinning at least a portion of the substrate, leaving the plurality of unsingulated semiconductor dies bonded to the carrier substrate.