A semiconductor device includes a first source wiring substructure connected to a plurality of source doping region portions of a transistor structure, and a second source wiring substructure connected to a plurality of source field electrodes located in a plurality of source field trenches extending into a semiconductor substrate. A contact wiring portion of the first source wiring substructure and a contact wiring portion of the second source wiring substructure are located in a wiring layer of a layer stack located on the semiconductor substrate. The contact wiring portion of the first source wiring substructure and the contact wiring portion of the second source wiring substructure each have a lateral size sufficient for a contact for at least a temporary test measurement. The wiring layer including the contact wiring portions is located closer to the substrate than any ohmic electrical connection between the first and the second source wiring substructures.

A semiconductor device includes a first source wiring substructure connected to a plurality of source doping region portions of a transistor structure, and a second source wiring substructure connected to a plurality of source field electrodes located in a plurality of source field trenches extending into a semiconductor substrate. A contact wiring portion of the first source wiring substructure and a contact wiring portion of the second source wiring substructure are located in a wiring layer of a layer stack located on the semiconductor substrate. The contact wiring portion of the first source wiring substructure and the contact wiring portion of the second source wiring substructure each have a lateral size sufficient for a contact for at least a temporary test measurement. The wiring layer including the contact wiring portions is located closer to the substrate than any ohmic electrical connection between the first and the second source wiring substructures.

A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.

Ruthenium containing gate stacks and methods of forming ruthenium containing gate stacks are described. The ruthenium containing gate stack comprises a polysilicon layer on a substrate; a silicide layer on the polysilicon layer; a barrier layer on the silicide layer; a ruthenium layer on the barrier layer; and a spacer layer comprising a nitride on sides of the ruthenium layer, wherein the ruthenium layer comprises substantially no ruthenium nitride after formation of the spacer layer. Forming the ruthenium layer comprises sputtering the ruthenium in a krypton environment on a high current electrostatic chuck comprising a high resistivity ceramic material. The sputtered ruthenium layer is annealed at a temperature greater than or equal to about 500 C.

A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate by the transfer head such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.

A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate so that the micro device is in contact with the liquid layer and is gripped by a capillary force.

A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate so that the micro device is in contact with the liquid layer and is gripped by a capillary force.

A thin film transistor, a method for manufacturing the thin film transistor, and a display device are provided. The thin film transistor includes a substrate, a semiconductor layer, a source electrode, a drain electrode, a gate electrode, an insulating layer, and a number of floating electrodes. The semiconductor layer is formed at the substrate. Two first doped regions are respectively formed at two ends of the semiconductor layer. The source electrode and the drain electrode are respectively disposed at the first doped regions. The gate electrode is disposed between the source electrode and the drain electrode. The semiconductor layer between the gate electrode and the drain electrode forms an offset region. A number of spaced second doped regions is formed at the offset region. The insulating layer covers the offset region without the second doped regions formed thereon. A number of floating electrodes is disposed at the insulating layer.

In a cutting method of a workpiece, a half-cut groove having a groove bottom that reflects light of an epi-illumination part is formed in a range of a peripheral surplus region of a planned dividing line that has not been cut, and the half-cut groove is detected with discrimination from a laser-processed groove that diffusely reflects the light and is darkly displayed.

In a cutting method of a workpiece, a half-cut groove having a groove bottom that reflects light of an epi-illumination part is formed in a range of a peripheral surplus region of a planned dividing line that has not been cut, and the half-cut groove is detected with discrimination from a laser-processed groove that diffusely reflects the light and is darkly displayed.