H01L2023/4087

LIQUID-COOLING HEAT DISSIPATION DEVICE AND LIQUID-COOLING HEAT DISSIPATION SYSTEM
20230014449 · 2023-01-19 ·

A liquid-cooling heat dissipation device and a liquid-cooling heat dissipation system for improving heat transfer efficiency are disclosed. The liquid-cooling heat dissipation device includes a vapor chamber, a liquid-separating cover, and a housing. The housing has a cold liquid inlet and a hot liquid outlet. An accommodating cavity is formed between the vapor chamber and the housing. By providing the vapor chamber, the heat transfer efficiency of the liquid-cooling heat dissipation device is improved greatly to realize rapid heat dissipation.

DUAL SIDE DIRECT COOLING SEMICONDUCTOR PACKAGE

Implementations of a semiconductor package may include one or more power semiconductor die included in a die module; a first heat sink directly coupled to one or more source pads of the die module; a second heat sink directly coupled to one or more drain pads of the die module; a gate contact coupled with one or more gate pads of the die module; and a coating coupled directly to the die module. The gate contact may be configured to extend through an immersion cooling enclosure.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Pressure balancing clamp for press-pack insulated gate bipolar transistor module

Disclosed is a pressure balancing clamp for a press-pack insulated gate bipolar transistor (IGBT) module. The pressure balancing clamp for a press-pack IGBT module includes a bracket, where the bracket is provided with two longitudinally arranged pressure equalizing plates in a sliding way; the pressure equalizing plates are connected through pressure sensors; the upper and lower ends inside the bracket are respectively connected with the pressure equalizing plates through hydraulic devices and a displacement compensation device; opposite surfaces of the two pressure equalizing plates are respectively provided with heat dissipation and confluence devices. The pressure sensors are in one-to-one correspondence with the hydraulic devices and are electrically connected. The hydraulic devices adjust the pressure according to the readings of the pressure sensors in corresponding directions, so that the pressure of the press-pack IGBT module is balanced.

Semiconductor device including heat dissipation structure and fabricating method of the same

A semiconductor device includes a chip package comprising a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die having an active surface, a back surface opposite to the active surface, and a thermal enhancement pattern on the back surface; and a heat dissipation structure connected to the chip package, the heat dissipation structure comprising a heat spreader having a flow channel for a cooling liquid, and the cooling liquid in the flow channel being in contact with the thermal enhancement pattern.

MEMORY ON PACKAGE (MOP) WITH REVERSE CAMM (COMPRESSION ATTACHED MEMORY MODULE) AND CMT CONNECTOR

Memory on Package (MOP) apparatus with reverse CAMM (Compression Attached Memory Module) and compression mount technology (CMT) connector(s). The MOP includes a first (MOP) substrate to which one or more CPUs, SoC, and XPUs that is operatively coupled to one or more CAMMs with a CMT connector(s) disposed between an array of CMT contact pads on the CAMM substrate and an array of CMT contact pad on the substrate. The one or more CAMMs are include multiple memory chips or packages such as LP DDR chips or DDR (S)DRAM chips/packages mounted to an underside of the CAMM substrate via signal coupling means such as a ball grid array (BGA), where the CAMM orientation is inverted such that the memory chips/packages are disposed downward, resulting in a reduced Z-height of the MOP. A MOP may include two CAMMs with a respective CMT connector disposed between the CAMM substrates and the MOP substrate.

MEMORY ON PACKAGE WITH INTERPOSER WITH COMPRESSION-BASED CONNECTORS

A system connects a board to a substrate through an interposer board having compressible connectors through the interposer board. The connectors through the interposer board are compression-based connector pins that extends above and below the interposer board to make electrical contact between the board and the substrate. The system can include a plate to secure the board to the substrate and compress the compression-based connectors of the interposer board.

Method of forming integrated circuit packages with mechanical braces

In an embodiment, a device includes: a package component including integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure over the encapsulant and the integrated circuit dies, and sockets over the redistribution structure; a mechanical brace physically coupled to the sockets, the mechanical brace having openings, each one of the openings exposing a respective one of the sockets; a thermal module physically and thermally coupled to the encapsulant and the integrated circuit dies; and bolts extending through the thermal module, the mechanical brace, and the package component.

INTERCONNECTION STRUCTURE FOR INTEGRATED CIRCUIT PACKAGE AND THE METHOD THEREOF
20220399264 · 2022-12-15 ·

An interconnection structure for IC package onto the external device is discussed. The IC package has a voltage regulator contained therein; and the external device has a load assembled thereupon. A plurality of connection devices with elasticity are attached to the IC package, so that when a perpendicular force is applied to the connection devices, the IC package is electrically coupled to the external device to provide power supply to the load with ease replacement.

HIGH EFFICIENCY HEAT DISSIPATION USING THERMAL INTERFACE MATERIAL FILM
20220392823 · 2022-12-08 ·

A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.