In one example, an electronic device comprises a base substrate comprising a base substrate conductive structure, a first electronic component over a first side of the base substrate, an encapsulant over the first side of the base substrate, wherein the encapsulant contacts a lateral side of the electronic component, an interposer substrate over a first side of the encapsulant and comprising an interposer substrate conductive structure, and a vertical interconnect in the encapsulant and coupled with the base substrate conductive structure and the interposer substrate conductive structure. A first one of the base substrate or the interposer substrate comprises a redistribution layer (RDL) substrate, and a second one of the base substrate or the interposer substrate comprises a laminate substrate. Other examples and related methods are also disclosed herein.

Disclosed are a composite substrate and a semiconductor structure, and the composite substrate includes a first semiconductor layer and a second semiconductor layer that are stacked, at least one heat dissipation groove is disposed on a surface, close to the second semiconductor layer, of the first semiconductor layer, a heat dissipation channel is disposed on a side wall of the first semiconductor layer, or a surface, away from the second semiconductor layer, of the first semiconductor layer, and the heat dissipation channel is in communication with the heat dissipation groove. The composite substrate and the semiconductor structure according to the present application can effectively resolve a heat dissipation problem of a high-power gallium nitride-based component by using a heat dissipation channel and a heat dissipation groove that are interconnected internal and external.

A flux transfer tool includes a flux tray, a baseplate, a flux transfer head and a flexible member. The baseplate is disposed on the flux tray. The baseplate has a plurality of holes formed thereon. The flux transfer head is arranged corresponding to the flux tray and configured to move with respect to the flux tray. The flexible member is disposed on the flux transfer head. The flexible member faces the baseplate when the flux transfer head is located above the flux tray. When the holes are filled with a flux, the flux transfer head moves towards the flux tray, such that the flexible member adsorbs the flux from the holes.

A packaging structure and a packaging method are provided. The packaging structure includes a substrate, a circuit wiring layer arranged on the substrate, a conductive bump arranged on the circuit wiring layer, and a semiconductor chip flip-chip mounted over the substrate. A functional area and a pad surrounding the functional area are arranged on a first surface of the semiconductor chip facing the substrate, and the pad is electrically connected to the conductive bump. The packaging structure further includes a sealing layer arranged on the substrate and surrounding the semiconductor chip, and a blocking structure arranged on the substrate. The blocking structure surrounds the functional area to block a material of the sealing layer from overflowing into the functional area.

In one example, an electronic device comprises a base substrate comprising a base substrate conductive structure, a first electronic component over a first side of the base substrate, an encapsulant over the first side of the base substrate, wherein the encapsulant contacts a lateral side of the electronic component, an interposer substrate over a first side of the encapsulant and comprising an interposer substrate conductive structure, and a vertical interconnect in the encapsulant and coupled with the base substrate conductive structure and the interposer substrate conductive structure. A first one of the base substrate or the interposer substrate comprises a redistribution layer (RDL) substrate, and a second one of the base substrate or the interposer substrate comprises a laminate substrate. Other examples and related methods are also disclosed herein.

A base plate includes a heat dissipation metal plate and a resin insulating layer. The resin insulating layer is formed on the heat dissipation metal plate. The resin insulating layer is provided with a notch where part of the heat dissipation metal plate is exposed. A case is bonded to an exposure part being part of the heat dissipation metal plate by means of a bonding agent.

A heat sink for cooling at least one power semiconductor module, and that includes a basin for containing a cooling liquid. The basin has a contact rim for receiving the base plate and that includes a surface that is sloped inwards to the basin.

A substrate support that allows for effortless debonding of a circuit pattern, the substrate support including a base material having a bonding surface to which a semiconductor substrate (circuit pattern) is bonded; and an adhesive layer having a pattern of dots formed in at least a portion of the bonding surface.

The present disclosure relates to semiconductor devices and semiconductor packages. One example semiconductor device includes a crystalline silicon layer, an amorphous silicon layer on the crystalline silicon layer and extending along a first surface of the crystalline silicon layer, and a dielectric layer on the amorphous silicon layer and extending along a surface of the amorphous silicon layer. The dielectric layer includes silicon oxynitride and has compressive stress.

A heat sink for cooling at least one power semiconductor module, and that includes a basin for containing a cooling liquid. The basin has a contact rim for receiving the base plate and that includes a surface that is sloped inwards to the basin.