H01L23/4951

SEMICONDUCTOR PACKAGE AND LEAD FRAME WITH ENHANCED DEVICE ISOLATION
20230088833 · 2023-03-23 ·

A semiconductor package includes a first semiconductor die, a first group of leads that each comprise an interior end, and an encapsulant body of electrically insulating material that encapsulates the semiconductor die and the interior ends of the leads from the first group, wherein a gap is disposed between outer sidewalls of two immediately adjacent ones of the leads from the first group, wherein the first semiconductor die is mounted on the first group of leads such that a lower surface of the first semiconductor die faces and overlaps with each of the leads from the first group, and wherein the lower surface of the first semiconductor die extends across the gap between outer sidewalls of two immediately adjacent ones of the leads from the first group.

SEMICONDUCTOR DEVICE

A semiconductor device comprising a DC-DC converter including a primary-side circuit and a secondary-side circuit including a first semiconductor package accommodating a first semiconductor element group including a first semiconductor element and a second semiconductor element. The first semiconductor element and the second semiconductor element are stacked. The first semiconductor element group is a MOSFET, an IGBT, or a diode.

INTEGRATED CIRCUIT HAVING AN ENHANCED THERMAL DISSIPATION PACKAGE

An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive connector and a die that has an active side and a non-active side. The active side of the die is connected to the electrically conductive connector via interconnects. A molding compound encapsulates the die and portions of the electrically conductive connector. A thermally conductive contact extends from a thermal hotspot on the die to an entry surface of the molding compound.

Packaged electronic device with suspended magnetic subassembly

A packaged electronic device includes a die pad directly connected to a first set of conductive leads of a leadframe structure, a semiconductor die attached to the conductive die pad, a conductive support structure directly connected to a second set of conductive leads, and spaced apart from all other conductive structures of the leadframe structure. A magnetic assembly is attached to the conductive support structure, and a molded package structure that encloses the conductive die pad, the conductive support structure, the semiconductor die, the magnetic assembly and portions of the conductive leads, the molded package structure including a top side, and an opposite bottom side, wherein the lamination structure is centered between the top and bottom sides.

MULTI-CHIP MODULE LEADLESS PACKAGE

A multi-chip module (MCM) package includes a leadframe including half-etched lead terminals including a full-thickness and half-etched portion, and second lead terminals including a thermal pad(s). A first die is attached by a dielectric die attach material to the half-etched lead terminals. The first die includes first bond pads coupled to first circuitry configured for receiving a control signal and for outputting a coded signal and a transmitter. The second die includes second bond pads coupled to second circuitry configured for a receiver with a gate driver. The second die is attached by a conductive die attach material to the thermal pad. Bond wires include die-to-die bond wires between a portion of the first and second bond pads. A high-voltage isolation device is between the transmitter and receiver. A mold compound encapsulates the first and the second die.

GRID ARRAY TYPE LEAD FRAME PACKAGE
20220328382 · 2022-10-13 · ·

A grid array type lead frame package includes a lead frame having a plurality of bonding fingers projecting inwardly from a periphery of the lead frame; a semiconductor device mounted on inner ends of the bonding fingers, wherein the semiconductor device comprises an active surface and a plurality of input/output (I/O) pads disposed on the active surface; a plurality of bonding wires extending between the I/O pads and the bonding fingers for transmitting signals from or to the semiconductor device; a molding compound at least partially encapsulating the semiconductor device, the bonding wires, and the bonding fingers; and a solder mask layer attached to a bottom surface of the molding compound and a bottom surface of each of the bonding fingers.

LEADED SEMICONDUCTOR DEVICE PACKAGE
20230068748 · 2023-03-02 ·

In a described example, an apparatus includes: a package substrate having a die pad configured for receiving a semiconductor die, and having conductive leads spaced from the die pad; a semiconductor die mounted on the die pad, the semiconductor die having bond pads on an active surface configured for making electrical connections; electrical connections coupling the bond pads of the semiconductor die to the conductive leads; mold compound covering a portion of the package substrate, the semiconductor die, and the electrical connections, with the leads extending through the mold compound and having end portions exposed from the mold compound; and the leads having a first portion with a first width and extending with the first width from the mold compound to a second portion having a second width that greater than the first width.

SEMICONDUCTOR DEVICE
20230110154 · 2023-04-13 ·

A semiconductor device includes a semiconductor element, a conducting member, a conductive bonding material, a resin member and a first barrier layer. The semiconductor element includes an element first surface and an element second surface facing away from each other in a thickness direction, with the element first surface provided with an electrode. The conducting member includes an obverse surface facing the element first surface and a reverse surface facing away from the obverse surface. The conductive bonding material is disposed between the electrode and the obverse surface of the conducting member. The resin member covers at least a portion of the conducting member, the semiconductor element and the conductive bonding material. The first barrier layer is disposed between the electrode and the conductive bonding material to prevent a reaction between the electrode and the conductive bonding material.

Component and method for producing a component

The invention relates to a component comprising a first part, a second part, a housing body, and a first electrode, wherein the housing body encloses the first electrode in lateral directions at least in some regions. The first electrode has a front face and a rear face facing away from the front face, and the front and rear faces are free of a cover produced by a material of the housing body at least in some regions. The first part is arranged on the front face, and the second part is arranged on the rear face, and both the first and second parts are connected to the first electrode in an electrically conductive manner. The first electrode is designed to be continuous and is arranged between the first part and the second part in the vertical direction. Also described is a method for producing the component.

ELECTRONIC DEVICE WITH EXPOSED TIE BAR
20220336331 · 2022-10-20 ·

A packaged electronic device has a package structure, first leads, second leads and a tie bar. The package structure has a first side, a second side, a third side, a fourth side, a fifth side and a sixth side, the second side spaced from the first side along a first direction, the fourth side spaced from the third side along an orthogonal second direction, and the sixth side spaced from the fifth side along an orthogonal third direction. The first leads extend outward in a first plane of the second and third directions from respective portions of the third side, the second leads extend outward in the first plane from respective portions of the fourth side, and the tie bar is exposed along the fifth side in a second plane of the second and third directions, the second plane between the first plane and the first side.