A lead frame includes a first frame member including a die pad; a second frame member that is layered on the first frame member and that includes a lead; and a resin with which a space around the die pad and the lead is filled, wherein the die pad includes a rising portion and a buried portion, the rising portion rises from the resin, the buried portion is buried in the resin and has a mount surface on which a semiconductor element is to be mounted and a side surface that is continuous to the mount surface, and the side surface is covered with the resin and has a constriction that is depressed in a direction parallel to the mount surface.

A packaged semiconductor device includes a routable molded lead frame structure with a surface finish layer. In one embodiment, the routable molded lead frame structure includes a first laminated layer including the surface finish layer, vias connected to the surface finish layer, and a first resin layer covering the vias leaving the top surface of the surface finish layer exposed. A second laminated layer includes second conductive patterns connected to the vias, bump pads connected to the second conductive patterns, and a second resin layer covering one side of the first resin layer, the second conductive patterns and the bump pads. A semiconductor die is electrically connected to the surface finish layer and an encapsulant covers the semiconductor die and another side of the first resin layer. The surface finish layer provides a customizable and improved bonding structure for connecting the semiconductor die to the routable molded lead frame structure.

A device is disclosed. The device includes a housing that defines a chamber. The chamber is to be at least partially filled with an electrolyte material. The device also includes a plurality of electrodes that are at least partially embedded in the housing and exposed to the chamber. The device further includes an access port that provides fluid communication between an interior of the housing and the outside environs.

A microelectronics package assembly and process of making same are disclosed. The flange has an upper surface and a first coating disposed on the upper surface of the flange. The insulator has a bottom surface for mounting onto the flange and an upper surface opposite the bottom surface. A second coating is disposed on the bottom surface of the insulator and a third coating disposed on the upper surface of the insulator. The first coating, the second coating, and the third coating each have a thickness of less than or equal to 1 micron. At least one of the first coating, the second coating, and the third coating is applied via at least one of physical vapor deposition, atomic deposition, or chemical deposition.

A pre-molded substrate includes a sculptured, electrically conductive laminar structure having spaces therein. The laminar structure includes a die pad having a first die pad surface configured to mount a semiconductor chip. A pre-mold material molded onto the laminar structure penetrates into the spaces and provides a laminar pre-molded substrate with the first die pad surface left exposed. The peripheral edge of the die pad includes an alternation of first and second anchoring formations to the pre-mold material. The first anchoring formations counter first detachment forces inducing displacement of the die pad with respect to the pre-mold material in a first direction from the second die pad surface to the first die pad surface. The second anchoring formations counter second detachment forces inducing displacement of the die pad with respect to the pre-mold material in a second direction from the first die pad surface to the second die pad surface.

A pre-molded leadframe includes a laminar structure having empty spaces therein and a first thickness with a die pad having opposed first and second die pad surfaces. Insulating pre-mold material is molded onto the laminar structure. The pre-mold material penetrates the empty spaces and provides a laminar pre-molded substrate having the first thickness with the first die pad surface left exposed. The die pad has a second thickness that is less than the first thickness. One or more pillar formations are provided protruding from the second die pad surface to a height equal to a difference between the first and second thicknesses. With the laminar structure clamped between surfaces of a mold, the first die pad surface and pillar formations abut against the mold surfaces. The die pad is thus effectively clamped between the clamping surfaces countering undesired flashing of the pre-mold material over the first die pad surface.

A packaged semiconductor device includes a routable molded lead frame structure with a surface finish layer. In one embodiment, the routable molded lead frame structure includes a first laminated layer including the surface finish layer, vias connected to the surface finish layer, and a first resin layer covering the vias leaving the top surface of the surface finish layer exposed. A second laminated layer includes second conductive patterns connected to the vias, bump pads connected to the second conductive patterns, and a second resin layer covering one side of the first resin layer, the second conductive patterns and the bump pads. A semiconductor die is electrically connected to the surface finish layer and an encapsulant covers the semiconductor die and another side of the first resin layer. The surface finish layer provides a customizable and improved bonding structure for connecting the semiconductor die to the routable molded lead frame structure.

Embodiments disclosed herein include a package substrate. In an embodiment, the package substrate comprises a core with a first surface and a second surface, where the core comprises glass. In an embodiment, a first via is through the core, where the first via comprise a conductive material, and a film over the first surface of the core, where the film is an adhesive. In an embodiment, a second via is through the film, where the second via comprises a conductive material, where the second via contacts the first via. In an embodiment, a centerline of the second via is aligned with a centerline of the first via. In an embodiment, a buildup layer is over the film.

A semiconductor device forming a bidirectional switch includes first and second carriers, first and second semiconductor chips arranged on the first and second carriers, respectively, a first row of terminals arranged along a first side face of the carrier, a second row of terminals arranged along a second side face of the carrier opposite the first side face, and an encapsulation body encapsulating the first and second semiconductor chips. Each row of terminals includes a gate terminal, a sensing terminal and at least one power terminal of the bidirectional switch.

A multi-chip module (MCM) package includes a leadframe including half-etched lead terminals including a full-thickness and half-etched portion, and second lead terminals including a thermal pad(s). A first die is attached by a dielectric die attach material to the half-etched lead terminals. The first die includes first bond pads coupled to first circuitry configured for receiving a control signal and for outputting a coded signal and a transmitter. The second die includes second bond pads coupled to second circuitry configured for a receiver with a gate driver. The second die is attached by a conductive die attach material to the thermal pad. Bond wires include die-to-die bond wires between a portion of the first and second bond pads. A high-voltage isolation device is between the transmitter and receiver. A mold compound encapsulates the first and the second die.