In examples, a semiconductor device comprises a semiconductor die, an opaque mold compound housing covering the semiconductor die, a conductive terminal extending from the mold compound housing, and an insulative coat covering the mold compound housing and at least a portion of the conductive terminal.

In one instance, a semiconductor package includes a lead frame and a semiconductor die mounted to the lead frame via a plurality of bumps that are shaped or tapered. Each of the plurality of bumps includes a first end connected to the semiconductor die and an opposing, second end connected to the lead frame. The first end has an end surface area A1. The second end has an end surface area A2. The end surface area A1 of the first end is less than the end surface area A2 of the second end. Other aspects are disclosed.

A semiconductor device includes: semiconductor elements and; a lead frame including a mount having an upper surface over which the semiconductor elements and are mounted; a sealing resin sealing the lead frame and the semiconductor elements and so that outer leads and of the lead frame protrude outwardly; and a resin wall located on an inner lead between the outer lead and the mount of the lead frame. A vertical thickness of the resin wall is greater than a vertical thickness from a lower surface of the sealing resin to a lower end of the lead frame.

A semiconductor device includes at least one first semiconductor element having a first electrode, a second semiconductor element having a second electrode, a first lead terminal connected to the first electrode of the at least one first semiconductor element, a second lead terminal connected to the second electrode of the second semiconductor element, a first resin with which the first lead terminal and the second lead terminal are sealed, and a second resin with which the at least one first semiconductor element and the second semiconductor element are sealed.

A stem for a semiconductor package, includes a plate, a frame, positioned on an outer periphery of the plate in a plan view, and bonded to the plate, and a lead terminal held in a state insulated from the plate and the frame. The plate protrudes from a top surface and a bottom surface of the frame, and a protruding amount of the plate from the top surface and a protruding amount of the plate from the bottom surface are the same.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a carrier, a first encapsulant, and an interposer. The first encapsulant is on the carrier and defines a cavity. The interposer is disposed between the first encapsulant and the cavity. The first encapsulant covers a portion of the interposer.

An integrated circuit package that includes a leadframe and a mold compound encapsulating at least a portion of the leadframe. The mold compound includes a cavity open at a bottom surface of the mold compound that exposes a bottom surface of the leadframe. A thermally conductive and electrically insulating isolation layer is locked within the bottom cavity of the mold compound and contacts the bottom surface of the leadframe.

A semiconductor package substrate and a method of manufacturing the same are provided. The semiconductor package substrate includes: a base layer including a conductive material, having a first surface and a second surface opposite the first surface, and having a first groove or first trench in the first surface and a second groove or second trench in the second surface; a first resin buried in the first groove or first trench in the first surface of the base layer; and a groove in at least one corner of the first surface of the base layer and having a depth based on the first surface is 1/2 or more of a thickness of the base layer.

A semiconductor device forming a bidirectional switch includes first and second carriers, first and second semiconductor chips arranged on the first and second carriers, respectively, a first row of terminals arranged along a first side face of the carrier, a second row of terminals arranged along a second side face of the carrier opposite the first side face, and an encapsulation body encapsulating the first and second semiconductor chips. Each row of terminals includes a gate terminal, a sensing terminal and at least one power terminal of the bidirectional switch.

A semiconductor device includes a metal chip mounting member and a semiconductor chip bonded to the chip mounting member through a metal sintered material, wherein the metal sintered material includes a first portion overlapping the semiconductor chip in a plan view, and includes a second portion surrounding the semiconductor chip in the plan view, and wherein a porosity ratio of the first portion is greater than or equal to 1% and less than 15%, and a porosity ratio of the second portion is greater than or equal to 15% and less than or equal to 50%.