A supporting structure is provided, which forms a protective layer on a metal member having a plurality of conductive posts, and the protective layer is exposed from end surfaces of the conductive posts, such that conductors are formed on the end surfaces of the conductive posts, thereby avoiding damage of the protective layer.

A leadframe including a metal oxide layer on at least a portion of the leadframe are disclosed. More specifically, leadframes with a metal layer and a metal oxide layer formed on one or more leads before a tin finish plating layer is formed are described. The layers of metal and metal oxide between the one or more leads and the tin finish plating layer reduce the formation of tin whiskers, thus reducing the likelihood of shorting and improving the overall reliability of the package structure and device produced.

A component carrier includes a stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, a component which is embedded in the stack and a stabilizing structure arranged between a stack surface of the stack and a main surface of the component. The stabilizing structure provides an interface adhesion to the main surface of the component.

Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described. The semiconductor layers may be nickel oxide layers. In some embodiments, an electronic device may include a substrate, a first metal layer on the substrate, a semiconductor layer comprising NiO on the first metal layer, and a second metal layer on the semiconductor layer. In some embodiments, an electronic device may include a substrate, a semiconductor layer comprising NiO directly on the substrate, and a metal layer directly on the semiconductor layer. A method for making an electronic device may include depositing a semiconductor layer comprising NiO on a substrate, and depositing a metal layer on the semiconductor layer, where the semiconductor layer substantially prevents the growth of whiskers on the metal layer.

A chip package structure using silicon interposer as interconnection bridge lifts multi-dies above the fan-out molding package embedded with premade Si interposer interconnection bridge under the multi-die space. The interconnection bridge connects the multi-dies through fine pitch high I/O interconnection. A first RDL and a second RDL are further disposed on top side and bottom side of the fan-out molding package, further providing connection for the multi-dies to a substrate via the connection routing inside the fan-out molding package.

Embodiments of the present disclosure provide a technique advantageous to an improvement in performance of a semiconductor device. The semiconductor device includes a first monocrystalline semiconductor layer on which a first semiconductor element is arranged, a second monocrystalline semiconductor layer on which a second semiconductor element is arranged, and a thin film transistor electrically connected to the first semiconductor element without an intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer and electrically connected to the second semiconductor element without an intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer.

An imaging device includes: a photoelectric converter which converts light into signal charges; a charge accumulation region which is electrically connected to the photoelectric converter, and accumulates the signal charges; a transistor having a gate electrode which is electrically connected to the charge accumulation region; and a contact plug which electrically connects the photoelectric converter to the charge accumulation region, is in direct contact with the charge accumulation region, and comprises a semiconductor material.

A conductive thin-film thinner than the undersurface electrode is provided outside the undersurface electrode on the undersurface of the ceramic substrate and connected to the undersurface electrode. A length from an outer circumferential part of the undersurface electrode to an outer circumferential pert of the ceramic substrate is equal to a length from an outer circumferential part of the top surface electrode to an outer circumferential part of the ceramic substrate. A thickness of the conductive thin-film is half or less than a thickness of the ceramic substrate.

A component carrier includes a stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, a component which is embedded in the stack and a stabilizing structure arranged between a stack surface of the stack and a main surface of the component. The stabilizing structure provides an interface adhesion to the main surface of the component.

A leadframe including a metal oxide layer on at least a portion of the leadframe are disclosed. More specifically, leadframes with a metal layer and a metal oxide layer formed on one or more leads before a tin finish plating layer is formed are described. The layers of metal and metal oxide between the one or more leads and the tin finish plating layer reduce the formation of tin whiskers, thus reducing the likelihood of shorting and improving the overall reliability of the package structure and device produced.