A 3D device including: a first level including first single crystal transistors overlaid by a second level including second single crystal transistors; a third level including third single crystal transistors, the second level is overlaid by the third level; a fourth level including fourth single crystal transistors, the third level is overlaid by the fourth level; first bond regions including first oxide to oxide bonds, where the first bond regions are between the first level and the second level; second bond regions including second oxide to oxide bonds, where the second bond regions are between the second level and the third level; and third bond regions including third oxide to oxide bonds, where the third bond regions are between the third level and the fourth level, where the second level, third level, and fourth level each include one array of memory cells, and where the one array of memory cells is a DRAM type memory.

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer; forming first alignment marks and control circuits including first single crystal transistors; forming at least one second level above the first level; performing a first etch step including etching first holes within the second level; forming at least one third level above the at least one second level; performing a second etch step including etching second holes within the third level; and performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level, where the etching first holes includes performing a lithography step aligned to the first alignment marks.

A 3D semiconductor device, the device including: a first level including single crystal first transistors, and a first metal layer, where the first level is overlaid by a first isolation layer; a second level including second transistors, where the first isolation layer is overlaid by the second level, and where the second level is overlaid by a second isolation layer; a third level including single crystal third transistors, where the second isolation layer is overlaid by the third level, where the third level is overlaid by a third isolation layer, where the third level is bonded to the second isolation layer, where the bonded includes at least one oxide to oxide bond, and where the bonded includes at least one metal to metal bond.

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer; forming first alignment marks and control circuits including first single crystal transistors; forming at least one second level above the first level; performing a first etch step including etching first holes within the second level; forming at least one third level above the at least one second level; performing a second etch step including etching second holes within the third level; and performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level, where the etching first holes includes performing a lithography step aligned to the first alignment marks.

A 3D semiconductor device, the device including: a first level including a first single crystal layer and first single crystal transistors; a first metal layer interconnecting the first single crystal transistors; second transistors disposed atop of the first single crystal transistors; third transistors disposed atop of the second transistors; fourth transistors disposed atop of the third transistors; where the fourth transistors include replacement gates, being processed to replace a non-metal gate material with a metal based gate, and where a distance from at least one of the fourth transistors to at least one of the second transistors is less than 1 micron.

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer and control circuits; forming at least one second level above the first level; performing a first etch step including etching holes within the second level; forming at least one third level above the at least one second level; performing a second etch step including etching holes within the third level; and performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level, where each of the first memory cells include one first transistor, where each of the second memory cells include one second transistor, where at least one of the first or second transistors has a channel, a source, and a drain having a same doping type.

A 3D semiconductor device, the device comprising: a first level comprising a single crystal layer, first transistors and a first metal layer; memory control circuits comprising said first transistors; a second level disposed above said first level, said second level comprising second transistors; a third level disposed above said second level, said third level comprising a plurality of third transistors; wherein said third transistors are aligned to said first transistors with a less than 40 nm alignment error, wherein said second level comprises a plurality of first memory cells, wherein said third level comprises a plurality of second memory cells, wherein one of said second transistors is at least partially self-aligned to at least one of said third transistors, being processed following a same lithography step, wherein at least one of said second memory cells comprises at least one of said third transistors, wherein said memory cells comprise a NAND non-volatile memory type.

Provided is a semiconductor integrated circuit device including a plurality of columns of IO cells and having a configuration capable of reducing wiring delays without causing an increase in the area. The semiconductor integrated circuit device includes a first IO cell column group including an IO cell column closest to a periphery of a chip, and a second IO cell column group including an IO cell column adjacent to the first IO cell column group at the side closer to the core region. At least one of the first IO cell column group or the second IO cell column group includes two or more IO cell columns, and the two or more IO cell columns are aligned in the second direction such that the lower power supply voltage regions face each other or the higher power supply voltage regions face each other.

A 3D semiconductor device, the device including: a first level including a single crystal layer and a plurality of first transistors; a first metal layer including interconnects between the plurality of first transistors, where the interconnects between the plurality of first transistors includes forming a plurality of logic gates; a plurality of second transistors atop at least a portion of the first metal layer, where at least six of the plurality of first transistors are connected in series forming at least a portion of a NAND logic structure, where the plurality of second transistors are vertically oriented transistors, and where the plurality of second transistors are at least partially directly atop of the NAND logic structure; and a second metal layer atop at least a portion of the plurality of second transistors, where the second metal layer is aligned to the first metal layer with less than 150 nm misalignment, and where at least one of the second transistors is a junction-less transistor.

A 3D semiconductor device including: a first level, which includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; a plurality of connection paths, where the paths provide connections from a plurality of the first transistors to a plurality of second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions and metal to metal bond regions, where the second level includes at least one memory array, and where the third layer includes crystalline silicon; and a heat removal path from the first layer or the third layer to an external surface of the device.