A detection device for detecting at least the occurrence and location of occurrence of sensor element signals that are generated by sensor elements, includes an array of detector element circuits each generating a element row output and at least one element column output. The detection device determines, for each row of detector element circuits, at least a first row summation signal corresponding to a sum of the element row outputs of the detector element circuits of this row, and a row address signal indicating that the first row summation signal crosses a threshold. The detection device also determines, for each column of detector element circuits, at least a first column summation signal corresponding to a sum of the element column outputs of the detector element circuits of this column, and a column address signal indicating that the first column summation signal crosses a threshold.

A surface plasmon-based photodetector includes: a silicon substrate; a grating in contact with a surface of the silicon substrate, in which the grating forms a Schottky diode with the semiconductor substrate; and a complementary-metal-oxide-semiconductor (CMOS) sample and hold stage as well as an analog-to-digital circuit (ADC) in the silicon substrate and arranged to detect electrical current generated at the Schottky diode.

The disclosure provides a display device and a driving method thereof. The display device has a camera region. The camera region includes multiple camera pixels. In a display mode, multiple camera pixels are in a state that a light beam is not allowed to pass through. In a camera mode, multiple camera pixels are in a state that a light beam is allowed to pass through.

An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.

A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

What is disclosed are systems and methods for optical correction for correcting for non-uniformity in active matrix light emitting diode device (AMOLED) and other emissive displays, using iterative processing of images of calibration patterns including features of coarse and fine granularity to successively generate a high-resolution estimate of the panel pixel locations.

An analog to digital converter (ADC) that is configured to service a photo-diode includes a capacitor and a self-referenced latched comparator. The capacitor produces a photo-diode voltage based on charging by a photo-diode current associated with the photo-diode and a digital to analog converter (DAC) source current and/or a DAC sink current. The self-referenced latched comparator generates a first digital signal that is based on a difference between the photo-diode voltage and a threshold voltage associated with the self-referenced latched comparator. Also, one or more processing modules executes operational instructions to process the first digital signal to generate a second digital signal and/or a third digital signal. An N-bit DAC generates the DAC source current based on the second digital signal, and an M-bit DAC generates the DAC sink current based on the third digital signal. The DAC source current and/or the DAC sink current tracks the photo-diode current.

A solid-state imaging device capable of performing encryption processing with enhanced security by quite extremely safely generating unique information and performing encryption processing based on the generated unique information. There is provided a solid-state imaging device including a unique information generation unit that generates predetermined analog information, a unique value generation unit that generates a predetermined unique value based on the predetermined analog information, and an encryption processing unit that performs encryption processing using the predetermined unique value, in which the unique value generation unit includes a detection unit that converts the predetermined analog information into digital information, and a unique value calculation unit that calculates the predetermined unique value using the digital information, in which the solid-state imaging device further includes a high-pass filter that passes a high-frequency signal for at least one of the analog information or the digital information.

To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulting film is provided between the first and the second conductive films.

An imaging device connected to a neural network is provided. An imaging device having a neuron in a neural network includes a plurality of first pixels, a first circuit, a second circuit, and a third circuit. Each of the plurality of first pixels includes a photoelectric conversion element. The plurality of first pixels is electrically connected to the first circuit. The first circuit is electrically connected to the second circuit. The second circuit is electrically connected to the third circuit. Each of the plurality of first pixels generates an input signal of the neuron. The first circuit, the second circuit, and the third circuit function as the neuron. The third circuit includes an interface connected to the neural network.