A detection device includes a plurality of detection elements arranged in a matrix having a row-column configuration in a detection region, a plurality of scan lines coupled to the detection elements arranged in a first direction, a plurality of output signal lines that are coupled to the detection elements arranged in a second direction different from the first direction, and to which the detection elements output detection signals, a detection circuit configured to be supplied with the detection signals through the output signal lines, and a control circuit configured to output at least selection signals for switching between selection and non-selection of the output signal lines to supply the detection signals to the detection circuit. The control circuit is configured to discharge an electric charge of each of the non-selected output signal lines different from the selected output signal lines.

An analog to digital converter (ADC) that is configured to service a photo-diode includes a capacitor and a self-referenced latched comparator. The capacitor produces a photo-diode voltage based on charging by a photo-diode current associated with the photo-diode and a digital to analog converter (DAC) source current and/or a DAC sink current. The self-referenced latched comparator generates a first digital signal that is based on a difference between the photo-diode voltage and a threshold voltage associated with the self-referenced latched comparator. Also, one or more processing modules executes operational instructions to process the first digital signal to generate a second digital signal and/or a third digital signal. An N-bit DAC generates the DAC source current based on the second digital signal, and an M-bit DAC generates the DAC sink current based on the third digital signal. The DAC source current and/or the DAC sink current tracks the photo-diode current.

A thin film transistor array substrate for a digital X-ray detector device including a base substrate; a plurality of data lines and a plurality of gate lines disposed on the base substrate and arranged to cross each other; a driving thin film transistor disposed above the base substrate and including a first electrode, a second electrode, a gate electrode and an active layer; a PIN diode connected to the driving thin film transistor; and at least one shielding layers disposed above the driving thin film transistor and configured to overlay the active layer, wherein the at least one shielding layers are electrically connected to the plurality of data lines.

A radiation imaging apparatus comprising a pixel array and a readout circuit is provided. The readout circuit includes an integrating amplifier configured to read out a signal from the pixel, a sample-and-hold circuit configured to sample an output from the integrating amplifier, and an A/D convertor configured to perform analog/digital conversion on an output from the sample-and-hold circuit and output the converted output. The apparatus performs first control and second control in parallel in an accumulation period for accumulating the signal in the pixel array. In the first control, the A/D convertor performs an analog/digital conversion operation, and in the second control, the integrating amplifier outputs a reference potential and the A/D convertor is electrically connected to a node configured to output the reference potential of the integrating amplifier.

An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

A solid-state image sensor according to the present disclosure includes a photodiode, a conversion circuit (current-voltage conversion circuit), a luminance change detection circuit (comparator), and a light-shielding unit (light-shielding film). The photodiode photoelectrically converts incident light to generate a photocurrent. The conversion circuit (current-voltage conversion circuit) converts the photocurrent into a voltage signal. The luminance change detection circuit (comparator) detects a change in luminance of the incident light on the basis of the voltage signal. The light-shielding unit (light-shielding film) shields incidence of light on the impurity diffusion region included in a circuit that inputs the voltage signal to the luminance change detection circuit (comparator).

According to an aspect, a detection device includes: a substrate; a plurality of transistors provided on the substrate; a plurality of scan lines that extend in a first direction; a plurality of signal lines that extend in a second direction intersecting the first direction; a plurality of photodiodes that are provided in an area surrounded by the scan lines and the signal lines and each include a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; and a shield wiring line that extends in the first direction and overlaps a corresponding one of the scan lines. The shield wiring line is electrically coupled to, among the signal lines, a power supply signal line configured to supply a power supply potential to the transistors.

A solid-state imaging apparatus includes a pixel circuit and a negative feedback circuit. The pixel circuit includes: a photodiode; a charge storage that holds a signal charge generated by the photodiode; an amplification transistor that outputs a pixel signal corresponding to the signal charge in the charge storage; a first reset transistor that resets the charge storage; a first storage capacitive element for holding a signal charge; and a first transistor that controls the connection between the charge storage and the first storage capacitive element. The negative feedback circuit negatively feeds back a feedback signal corresponding to a reset output of the amplification transistor to the charge storage via the first reset transistor.

A semiconductor device that is less influenced by variations in characteristics between transistors or variations in a load, and is efficient even for normally-on transistors is provided. The semiconductor device includes at least a transistor, two wirings, three switches, and two capacitors. A first switch controls conduction between a first wiring and each of a first electrode of a first capacitor and a first electrode of a second capacitor. A second electrode of the first capacitor is connected to a gate of the transistor. A second switch controls conduction between the gate and a second wiring. A second electrode of the second capacitor is connected to one of a source and a drain of the transistor. A third switch controls conduction between the one of the source and the drain and each of the first electrode of the first capacitor and the first electrode of the second capacitor.

A solid-state imaging device includes a second image sensor having an organic photoelectric conversion film transmitting a specific light, and a first image sensor which is stacked in layers on a same semiconductor substrate as that of the second image sensor and which receives the specific light having transmitted the second image sensor, in which a pixel for focus detection is provided in the second image sensor or the first image sensor. Therefore, an AF method can be realized independently of a pixel for imaging.