To provide an imaging device that suppresses reflection of incident light still more effectively and has excellent sensitivity characteristics. This imaging device includes a semiconductor substrate and a photoelectric conversion section. The semiconductor substrate includes a multi-stepped recess in which a plurality of respective holes defined by first outlines having substantially polygonal shapes is continuous in a thickness direction. The substantially polygonal shapes extend along a first surface orthogonal to the thickness direction and are different from each other in size in a plan view taken along the thickness direction. The photoelectric conversion section generates electric charge through photoelectric conversion. The photoelectric conversion section is defined by a second outline including a portion inclined with respect to the first outlines of the holes in a plan view. The electric charge corresponds to an amount of incident light passing through the multi-stepped recess.

A method is provided that includes forming a cavity in a substrate. The cavity is formed to extend into the substrate from a first surface to a second surface. Sidewall spacers are formed on sidewalls of the substrate in the cavity. A semiconductor layer is formed on the second surface in the cavity of the substrate, and the semiconductor layer abuts the sidewall spacers in the cavity.

The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. The substrate has a plurality of protrusions disposed along a first side of the substrate over the image sensing element and a ridge disposed along the first side of the substrate. The ridge continuously extends around the plurality of protrusions.

An image sensor includes: photodiodes arranged in a substrate; active pillars connected to the photodiodes and extending in a vertical direction perpendicular to a bottom surface of the substrate; at least two transistors stacked in the vertical direction, wherein portions of the active pillars are channel areas of the at least two transistors; a floating diffusion (FD) area disposed under a transfer transistor, which is one of the at least two transistors, wherein the FD area is configured to receive charge from the photodiode through the transfer transistor and the portions of the active pillars; and a light transmitting layer disposed on a top surface of the substrate.

A camera device for integration into a wearable device is presented. The camera device includes an image sensor, a lens assembly, a first high density interconnect (HDI) tape substrate, a second HDI tape substrate, and a molded plastic layer. The molded plastic layer is sandwiched between the first and second HDI tape substrates. A wearable device with at least one soft electrode is further presented. The at least one soft electrode includes a conductive coating applied to an elastomer substrate and monitors electrical signals generated by a wearer of the wearable device to initiate an appropriate action. A method of forming an aggregate coating for a wearable device is further presented. One or more thin films are applied to a surface of the wearable device, and a paint coating is applied to a surface of the one or more thin films to form the aggregate coating.

Provided are a multicolor photodetector and a method of fabricating the same through integration with a readout integrated circuit. The multicolor photodetector may be fabricated by providing an integrated circuit device in which a readout integrated circuit is wired; forming an assembly in which a first photodetection layer for detecting first wavelength light from incident light and a second photodetection layer for detecting second wavelength light from the incident light on the integrated circuit device; and electrically connecting the first photodetection layer and the second photodetection layer to the readout integrated circuit using connecting members.

An infrared cut-off filter, including a cyanine dye and a copolymer. The cyanine dye includes tris(pentafluoroethyl) trifluorophosphate and a cation having a polymethine and a nitrogen-containing heterocycle at each end of the polymethine. The copolymer includes a first repeating unit from a first monomer and a second repeating unit from a second monomer different from the first monomer. The first monomer includes a phenolic hydroxyl group.

A film comprises an amorphous transition metal oxide as a main component, and 1.0 at % or more of hydrogen.

An image sensor pixel includes a photodiode, a lens positioned in a light-receiving path of the photodiode, and an anti-reflective coating disposed between the photodiode and the lens and including four layers. The four layers include alternating layers of a higher refractive index material and a lower refractive index material. The higher refractive index material has a refractive index that is higher than the lower refractive index material.

A radiation detector has a photoelectric conversion element array having a light receiving unit and a plurality of bonding pads; a scintillator layer stacked on the photoelectric conversion element array; a resin frame formed on the photoelectric conversion element array so as to pass between the scintillator layer and the bonding pads away from the scintillator layer and the bonding pads and so as to surround the scintillator layer; and a protection film covering the scintillator layer and having an outer edge located on the resin frame; a first distance between an inner edge of the resin frame and an outer edge of the scintillator layer is shorter than a second distance between an outer edge of the resin frame and an outer edge of the photoelectric conversion element array; the outer edge and a groove are processed with a laser beam.