A light detection device includes a sensor array and a readout circuit. The sensor array includes a compound semiconductor substrate having a first main surface and a second main surface opposite to the first main surface, a plurality of photodetectors arranged two-dimensionally on the first main surface, and an insulating film disposed on the second main surface. The readout circuit includes a silicon substrate having a third main surface connected to the first main surface of the compound semiconductor substrate. The insulating film contains an insulating material having a lower thermal expansion coefficient than a compound semiconductor contained in the compound semiconductor substrate. The insulating film includes at least one first portion having a first thickness and a second portion having a second thickness larger than the first thickness.

An X-ray detection device includes a substrate, a first transistor disposed on the substrate and including a silicon semiconductor, a second transistor disposed on the substrate and including a metal oxide semiconductor, a sensor disposed on the first transistor and the second transistor and electrically connected to the first transistor and the second transistor, a first barrier layer disposed between the first transistor and the second transistor, and a second barrier layer disposed between the second transistor and the sensor. The X-ray detection device may further include a scintillator disposed on the sensor.

A photoelectric conversion apparatus comprising an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer. There is a point at which d.sub.sio>(ε.sub.sio/ε.sub.prot)×d.sub.prot/2 is satisfied, where d.sub.sio is a thickness of the oxide film, d.sub.prot is a thickness of the protective film, ε.sub.sio is a relative permittivity of the oxide film, and ε.sub.prot is a relative permittivity of the protective film.

The present invention relates to a method of manufacturing a backside illumination (BSI) CMOS optical sensor and more specifically to a method of reducing the cross talk and enhance the photon detection efficiency (PDE) in a backside illumination (BSI) CMOS optical sensor. In particular the claimed method comprises the step of creating an isolation structure between the adjacent sensing elements of the pixel-array of said BSI CMOS optical sensor, so as to isolate all the adjacent sensing elements from each other, and the step of creating a common voltage backside applying structure to all the sensing elements of said pixel-array, so as to connect all the sensing elements to a common voltage bias.

A sensor system includes a plurality of optical sensors implemented in a pixel layer of an integrated circuit and a plurality of sets of optical filters implemented proximal to the pixel layer in a plurality of alternating filter layers. An optical filter of a set of optical filters includes a plurality of filter components implemented in a stack and is configured to pass a respective target wavelength range of light to one or more optical sensors of the plurality of optical sensors. One or more filter components of the plurality of filter components in a filter layer of the plurality of filter layers is common to a plurality of optical filters of a set of optical filters.

A micro spectrum chip based on units of different shapes. The micro spectrum chip includes a CIS wafer and an optical modulation layer. The optical modulation layer includes several micro-nano structure units arranged on the surface of a photosensitive area of the CIS wafer. Each micro-nano structure unit includes a plurality of micro-nano structure arrays, and in each micro-nano structure unit, different micro-nano structure arrays are two-dimensional gratings composed of internal units of different shapes. In each micro-nano structure unit in this scheme, different micro-nano structure arrays have different shapes of internal units, and each group of micro-nano structure arrays have different modulation effects on lights with different wavelengths. The degree of freedom of “shape” is fully utilized to obtain a rich modulation effect on the incident light. A two-dimensional grating structure based on internal units of different shapes is utilized.

Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

An example image sensor structure includes an image layer. The image layer includes an array of light detectors disposed therein. A device stack is disposed over the image layer. An array of light guides is disposed in the device stack. Each light guide is associated with at least one light detector of the array of light detectors. A passivation stack is disposed over the device stack. The passivation stack includes a bottom surface in direct contact with a top surface of the light guides. An array of nanowells is disposed in a top layer of the passivation stack. Each nanowell is associated with a light guide of the array of light guides. A crosstalk blocking metal structure is disposed in the passivation stack. The crosstalk blocking metal structure reduces crosstalk within the passivation stack.

Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes and image sensor element disposed within a substrate. The substrate comprises a first material. The image sensor element includes an active layer comprising a second material different from the first material. A buffer layer is disposed between the active layer and the substrate. The buffer layer extends along outer sidewalls and a bottom surface of the active layer. A capping structure overlies the active layer. Outer sidewalls of the active layer are spaced laterally between outer sidewalls of the capping structure such that the capping structure continuously extends over outer edges of the active layer.

According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.